DSS5240TQ-7 The DSS5240TQ-7 is a PNP low saturation bipolar junction transistor from Diodes Incorporated. It features a -40V collector-emitter breakdown voltage and -2A continuous collector current in a surface-mount SOT23-3 package.
Mfr Part #:

DSS5240TQ-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DSS5240TQ-7 is a PNP low saturation bipolar junction transistor from Diodes Incorporated. It features a -40V collector-emitter breakdown voltage and -2A continuous collector current in a surface-mount SOT23-3 package.
Total Stock: 121,020 pcs
$ Price Range: $0.12 - $0.66

DSS5240TQ-7 Available from 1 distributor

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DSS5240TQ-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector Peak Current (Max)
Collector-Emitter Breakdown Voltage (Min)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Reel Size
Standard Package Quantity
Storage Temperature
Supplier Device Package
Tape & Reel
Tape Width
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DSS5240TQ-7 Description

Short technical summary and product information.

The DSS5240TQ-7 is a PNP low saturation bipolar junction transistor designed by Diodes Incorporated for automotive and general-purpose switching applications. It offers a minimum collector-emitter breakdown voltage of -40V and supports a continuous collector current of -2A, with a peak pulse current capability of -3A.

 

This transistor provides a typical transition frequency of 100 MHz and a minimum DC current gain of 210 at 1A collector current and 2V collector-emitter voltage. The maximum collector-emitter saturation voltage is -350mV at a base current of 200mA and collector current of 2A, enabling efficient low-voltage switching.

 

The device is housed in a surface-mount SOT23-3 package (also known as TO-236-3 or SC-59) and is rated for a maximum power dissipation of 730mW at 25°C ambient temperature. It operates over a junction temperature range of -55°C to 150°C.

 

The DSS5240TQ-7 is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications. It is supplied on 7-inch reels with 8mm tape width in quantities of 3000 units per reel.

DSS5240TQ-7 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: DSS5240TQ-7 PNP Low Saturation Transistor
Subcategory: Single PNP

DSS5240TQ-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

DSS5240TQ-7 Estimated Pricing

Qty Low High
1+ $0.66 $0.66
10+ $0.41 $0.41
100+ $0.27 $0.27
500+ $0.19 $0.19
1,000+ $0.16 $0.16
3,000+ $0.12 $0.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

DSS5240TQ-7 Features

  • PNP low saturation bipolar junction transistor.
  • Minimum collector-emitter breakdown voltage of -40V.
  • Continuous collector current rating of -2A.
  • Typical transition frequency of 100 MHz.
  • Surface-mount SOT23-3 package.

DSS5240TQ-7 Applications

  • Gate driving for MOSFETs and IGBTs.
  • Load switch in power management circuits.
  • DC-DC converter switching applications.
  • Battery charging control circuits.

DSS5240TQ-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the DSS5240TQ-7?

The minimum collector-emitter breakdown voltage (BVCEO) is -40V.

What is the maximum continuous collector current?

The maximum continuous collector current is -2A.

What is the package type of the DSS5240TQ-7?

The DSS5240TQ-7 is available in a surface-mount SOT23-3 package, also known as TO-236-3 or SC-59.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DSS5240TQ-7 RoHS compliant?

The datasheet states the device is Totally Lead-Free and Fully RoHS Compliant (RoHS3).

What is the typical transition frequency?

The typical transition frequency is 100 MHz.

What is the maximum power dissipation?

The maximum power dissipation is 730 mW at 25°C ambient temperature.

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