DSS4160V-7

The DSS4160V-7 is an NPN bipolar junction transistor from Diodes Incorporated, designed for low collector-emitter saturation voltage (VCE(SAT)) applications. It features a maximum collector-emitter voltage of 60V, a maximum collector-base voltage of 80V, and a maximum emitter-base voltage of 5V. The device supports a continuous collector current of 1A and a peak pulse collector current of 2A, making it suitable for switching and amplification in compact electronic assemblies.

Electrical characteristics include a DC current gain (hFE) of at least 250 at Vce=5V and Ic=1mA, and at least 100 at Vce=5V and Ic=1A. The typical transition frequency is 150MHz, and the output capacitance is 10pF maximum. The collector-emitter saturation voltage is typically 110mV at Ic=100mA and Ib=1mA, and a maximum of 250mV at Ic=1A and Ib=100mA, ensuring efficient low-voltage operation.

The device is housed in an ultra-small SOT-563 surface mount package, which is suited for automated assembly and space-constrained PCB designs. It is rated for a power dissipation of 600mW at 25°C ambient temperature, with a thermal resistance of 208°C/W when mounted on an FR-4 PCB with minimum recommended pad layout. The operating and storage temperature range is -55°C to +150°C.

This transistor is lead-free and RoHS compliant, and is classified as a 'Green Device' by the manufacturer. It is designed for general-purpose switching and amplification in a variety of low-power applications.