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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Forward Current | |
| Capacitance @ Vr, F | |
| Current | |
| Current - Average Rectified (Io) | |
| Forward Voltage (Typical/Maximum @ IF = 100 mA) | |
| Forward Voltage (Typical/Maximum @ IF=10 mA) | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Reverse Current (Maximum @ VR=30 V) | |
| Reverse Current (Maximum @ Vr=10 V) | |
| Reverse Voltage | |
| SVHC Present | |
| Speed | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Surge Current (10ms) | |
| Tape & Reel | |
| Technology | |
| Total Capacitance | |
| Voltage |
The Toshiba DSR01S30SC,L3F is a silicon epitaxial Schottky barrier diode designed for high-speed switching applications. It has a maximum reverse voltage of 30V and an average forward current of 100mA when mounted on a standard FR4 board. The diode offers low forward voltage: 0.37V typical at 10mA and 0.51V typical at 100mA, ensuring efficient operation. Reverse current is low, with maximum 0.35µA at 10V and 0.7µA at 30V. The device is housed in a compact SC2 (0201) surface mount package, suitable for space-constrained designs. Operating junction temperature range is -55°C to 125°C. The diode is RoHS compliant and has MSL 1.
30V.
100mA when mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²).
0.51V typical, 0.62V maximum.
SC2 (0201 metric) surface mount package.
-55°C to 125°C.
8.2pF typical at 0V bias, 1MHz.
2A for 10ms.