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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,474 pcs
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2474 pcs | On Request | 1 | On Request | On Request | 1423+ | On Request | On Request |
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The IXYS DSEP30-06B is a fast recovery epitaxial diode designed for high frequency switching applications. It features a maximum reverse voltage of 600V and an average forward current rating of 30A at a case temperature of 125°C. The diode is built using planar passivated chips and offers a typical reverse recovery time of 30ns, making it suitable for low switching loss designs.
The device is through-hole mounted in the industry standard ISOPLUS247 package, which provides a robust mechanical interface. Key electrical characteristics include a maximum forward voltage of 2.51V at 30A and 25°C, and a maximum reverse leakage current of 250µA at 25°C. The junction operating temperature range is -55°C to 175°C.
Typical applications include antiparallel diodes for high frequency switching devices, freewheeling diodes in converters and motor control circuits, snubber diodes, and rectifiers in switch mode power supplies.
600V.
30A at a case temperature of 125°C.
30ns at IF=1A, -di/dt=200A/µs, VR=30V, 25°C.
ISOPLUS247 through-hole package.
Maximum 2.51V.