| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,439 pcs
|
2439 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Output Capacitance | |
| Collector-Base Cutoff Current | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Cutoff Current | |
| Collector-Emitter Voltage (VCEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Halogen Free | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Packaging Type | |
| Peak Collector Current | |
| Power | |
| Standard Package Quantity | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The DSA900100L from Panasonic Electronic Components is a PNP silicon epitaxial planar transistor designed for general amplification applications. It offers a maximum collector-emitter voltage of -50 V, a maximum collector current of -100 mA, and a peak collector current of -200 mA. The device provides a high forward current transfer ratio (hFE) ranging from 210 to 460 at VCE = -10 V and IC = -2 mA, with rank classification for tighter gain matching (R: 210-340, S: 290-460).
Electrical characteristics include a typical transition frequency of 150 MHz and a low collector output capacitance of 2 pF, making it suitable for high-frequency circuits. The collector-emitter saturation voltage is typically 0.2 V and maximum 0.5 V at IC = -100 mA, IB = -10 mA. Maximum power dissipation is 125 mW, with a junction temperature rating of 150°C.
The transistor is housed in a surface-mount SC-89 / SOT-490 package (Panasonic code SSMini3-F3-B). It is supplied in embossed tape on reels of 3000 pieces. The device complies with the RoHS Directive (EU 2002/95/EC) and is halogen-free. A complementary NPN type (DSC9001) is available for push-pull configurations.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.07 | $0.07 |
| 6,000+ | $0.07 | $0.07 |
| 9,000+ | $0.06 | $0.06 |
| 15,000+ | $0.06 | $0.06 |
| 21,000+ | $0.06 | $0.06 |
| 30,000+ | $0.05 | $0.05 |
| 75,000+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum VCEO is -50 V.
It is available in SC-89, SOT-490 surface mount package (SSMini3-F3-B).
The maximum junction temperature is 150°C, and storage temperature range is -55 to +150°C.
Yes, it is RoHS3 compliant as per the datasheet.
The hFE ranges from 210 to 460 at VCE = -10 V, IC = -2 mA, with rank options R (210-340), S (290-460), or no-rank (210-460).
The typical transition frequency is 150 MHz.
It is a PNP silicon epitaxial planar transistor.