DS9502P

The DS9502P is an ESD protection diode designed for SRAM-based battery-buffered portable memory modules. It features a Zener characteristic with voltage snap-back to protect against ESD hits. The device is compatible with all 5V logic families.

Key electrical specifications: reverse standoff voltage 7.5V, avalanche voltage 7.4V min to 7.8V max, trigger voltage 9.0V to 9.5V. Holding voltage 5.5V typical, holding current 30mA typical. Leakage current 30nA typical, 100nA max. Junction capacitance 55pF typical at 5V, 100pF at 0V. ESD protection level >27kV per IEC 801-2.

During normal operation, the device behaves like a 7.5V Zener diode. When voltage exceeds the trigger voltage, it snaps back to a lower voltage, allowing higher current to flow while maintaining protection. The device will stay in snapback mode as long as minimum holding current or voltage is maintained. It is surface mount in a 6-TSOC package (6-SMD, J-Lead), measuring 3.7x4.0x1.5mm, weight 0.5g.

Operating temperature range -40°C to +85°C, storage -55°C to +125°C. Soldering temperature 260°C for 10 seconds. Continuous DC current through package 80mA max. The DS9502P is designed to fail short in case of abnormal ESD hits beyond maximum ratings, preventing further damage.