| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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|
2,004 pcs
|
2004 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The DS1230Y-120IND+ is a 256k Nonvolatile Static Random Access Memory (SRAM) manufactured by Dallas Semiconductor (Maxim).
Organized as 32,768 words by 8 bits, this component provides 256 kilobits of nonvolatile storage. A key feature is its self-contained lithium energy source and control circuitry, which automatically protects data during power loss. It boasts unlimited write cycles and read/write access times as fast as 70 ns.
Designed to replace existing 32k x 8 volatile static RAMs, EEPROMs, or Flash memory, the DS1230Y-120IND+ conforms to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing for direct substitution while enhancing performance. It operates within a full ±10% VCC range and offers a minimum data retention of 10 years in the absence of external power.
The standard package is DIP-28, suitable for through-hole mounting. An optional industrial temperature range of -40℃ to +85℃ is available, designated IND.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is full ±10% VCC.
It is available in a DIP-28 through-hole package.
The operating temperature range is 0°C to 70°C (industrial -40°C to +85°C).
Data retention is 10 years minimum in the absence of external power.
Read and write access times are as fast as 70 ns.
It has unlimited write cycles.
It is 256k Nonvolatile SRAM organized as 32,768 words by 8 bits.