| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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|
1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 03+06+ | On Request | On Request |
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The DS1230Y-100+ from Dallas Semiconductor is a 262,144-bit nonvolatile Static RAM, organized as 32,768 words by 8 bits. This component features a 10-year minimum data retention without external power and automatically protects data during power loss.
With read and write access times of 70 ns, the DS1230Y-100+ offers efficient operation. It supports unlimited write cycles and operates within a ±10% VCC range for the DS1230Y variant. An optional industrial temperature range of -40°C to +85°C is available.
Designed to replace 32k x 8 volatile static RAM, EEPROM, or Flash memory, this nonvolatile SRAM comes in a standard JEDEC 28-pin DIP package, allowing for direct substitution in many applications. It also offers a PowerCap Module (PCM) package for surface-mountable applications, featuring a replaceable snap-on PowerCap with a lithium backup battery.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The DS1230Y-100+ operates at full ±10% VCC range (DS1230Y) or optional ±5% VCC (DS1230AB).
It is available in a 28-pin DIP package with PowerCap Module (PCM).
An optional industrial temperature range of -40°C to +85°C is available (designated IND).
It retains data for a minimum of 10 years without external power.
It supports unlimited write cycles.
Read and write access times are 70 ns.
It is organized as 32,768 words by 8 bits (256k total).