| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,414 pcs
|
1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The DS1230AB-70IND+ is a 256Kbit Nonvolatile SRAM (NV SRAM) organized as 32,768 words by 8 bits, manufactured by Analog Devices / Maxim Integrated. This component provides 70ns read and write access times, making it suitable for applications requiring fast data access.
It operates within a voltage range of 4.75V to 5.25V and is specified for an industrial temperature range of -40°C to 85°C. The device features automatic data protection during power loss, ensuring data integrity. It is designed to replace traditional volatile static RAM, EEPROM, or Flash memory.
The DS1230AB-70IND+ is available in a 28-pin DIP package, designed for through-hole mounting. Its non-volatile nature is achieved through an integrated lithium energy source and control circuitry, providing a minimum data retention of 10 years without external power. The device supports unlimited write cycles.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The DS1230AB-70IND+ has a memory size of 256 Kbit.
The access time for the DS1230AB-70IND+ is 70 ns.
The operating voltage range for the DS1230AB-70IND+ is 4.75 V to 5.25 V.
The DS1230AB-70IND+ operates in the temperature range of -40°C to 85°C.
The DS1230AB-70IND+ is a Nonvolatile SRAM (NVSRAM).
The DS1230AB-70IND+ has a minimum data retention of 10 years.
The DS1230AB-70IND+ is supplied in a 28-EDIP package.