| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,606 pcs
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1606 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| High Side Voltage | |
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The DRV8300DRGER from Texas Instruments is a 100-V, 3-phase half-bridge gate driver capable of driving high-side and low-side N-channel power MOSFETs. This device integrates bootstrap diodes for efficient high-side gate voltage generation, supporting up to 100-V MOSFET supply and 125-V absolute maximum BSTx voltage.
Key electrical characteristics include a gate driver supply voltage range of 5 V to 20 V, with output currents of 750 mA source and 1.5 A sink. It supports 3.3-V and 5-V logic inputs and offers typical propagation delay matching of 4 ns. The operating temperature range is -40°C to 125°C.
Packaged in a compact 24-VQFN (4x4) with an exposed pad, the DRV8300DRGER is suitable for surface mount applications. It includes integrated protection features such as BST undervoltage lockout and GVDD undervoltage lockout, contributing to efficient and reliable system design for applications like brushless DC motor control.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.26 | $0.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate driver supply voltage range is 5 V to 20 V.
The maximum high-side voltage is 105 V.
The operating temperature range is -40°C to 125°C.
The DRV8300DRGER is available in a 24-VFQFN exposed pad package (24-VQFN 4x4 mm).
The peak source current is 750 mA and the peak sink current is 1.5 A.
The DRV8300DRGER has 3 channels for 3-phase drive.
It drives N-channel MOSFETs in high-side and low-side configurations.