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DRA9A14Y0L PNP pre-biased transistor for switching applications. Features 50V breakdown voltage, 80mA collector current, and 125mW power dissipation in a surface mount SC-89 package.
Mfr Part #:

DRA9A14Y0L

Available from 1 distributors
Mfr Name: Panasonic Electronic Components
Panasonic Electronic Components
PNP pre-biased transistor for switching applications. Features 50V breakdown voltage, 80mA collector current, and 125mW power dissipation in a surface mount SC-89 package.
✓ Total Stock: 28,005 pcs

DRA9A14Y0L Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
28,005 pcs
On Request
28005 pcs On Request 1 On Request On Request 17+ On Request On Request
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DRA9A14Y0L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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DRA9A14Y0L Description

Short technical summary and product information.

The DRA9A14Y0L is a PNP pre-biased transistor from Panasonic Electronic Components, designed for low-power switching and amplification. It features a collector-emitter breakdown voltage of 50V, a collector current rating of 80mA, and a power dissipation of 125mW. The built-in base resistor (R1 = 47kΩ) simplifies circuit design by reducing external component count. The transistor offers a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V VCE, with a maximum saturation voltage of 250mV at 500µA base current.

 

Packaged in a surface-mount SC-89 (SOT-490) case with supplier device package SSMini3-F3-B, the DRA9A14Y0L is suitable for compact PCB layouts. The small footprint makes it ideal for portable and space-constrained electronics.

 

Typical applications include load switching, signal buffering, and digital logic interfaces where pre-biased configuration simplifies design and reduces PCB area.

DRA9A14Y0L Quick Information

Product Type: Pre-Biased Transistor
Canonical Name: PNP Pre-Biased Transistor
Subcategory: PNP Pre-Biased

DRA9A14Y0L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DRA9A14Y0L Features

  • PNP pre-biased transistor design.
  • 50V collector-emitter breakdown voltage.
  • 80mA collector current rating.
  • 125mW power dissipation capability.
  • Surface mount SC-89 package.

DRA9A14Y0L Applications

  • Suitable for load switching circuits.
  • Ideal for signal buffering applications.
  • Used in portable electronics.
  • Simplifies digital logic interfaces.

DRA9A14Y0L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the transistor type of DRA9A14Y0L?

PNP - Pre-Biased.

What is the collector-emitter breakdown voltage of DRA9A14Y0L?

50 V.

What is the collector current rating of DRA9A14Y0L?

80 mA.

What is the power dissipation of DRA9A14Y0L?

125 mW.

What is the base resistor value in DRA9A14Y0L?

47 kΩ (R1).

What is the minimum DC current gain (hFE) of DRA9A14Y0L?

80 at Ic=5mA, Vce=10V.

What package is DRA9A14Y0L available in?

SC-89, SOT-490 (SSMini3-F3-B).

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