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DRA5114Y0L PNP pre-biased transistor with 50V breakdown voltage, 100mA collector current, and 150mW power dissipation in a surface-mount SC-85 package.
Mfr Part #:

DRA5114Y0L

Available from 1 distributors
Mfr Name: Panasonic Electronic Components
Panasonic Electronic Components
PNP pre-biased transistor with 50V breakdown voltage, 100mA collector current, and 150mW power dissipation in a surface-mount SC-85 package.
✓ Total Stock: 9,000 pcs
$ Price Range: $0.05 - $0.07

DRA5114Y0L Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
9,000 pcs
On Request
9000 pcs On Request 1 On Request On Request 1728+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DRA5114Y0L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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DRA5114Y0L Description

Short technical summary and product information.

The DRA5114Y0L is a PNP pre-biased bipolar junction transistor manufactured by Panasonic Electronic Components. It features a built-in 47 kΩ base resistor, simplifying circuit design by reducing external component count.

 

Key electrical specifications include a maximum collector-emitter breakdown voltage of 50V, a maximum collector current of 100mA, and a maximum power dissipation of 150mW. The DC current gain (hFE) is a minimum of 80 at 5mA collector current and 10V collector-emitter voltage. The collector-emitter saturation voltage is 250mV maximum at 500µA base current and 10mA collector current.

 

The device is designed for surface mount assembly and is housed in an SC-85 package with a supplier device package of SMini3-F2-B.

DRA5114Y0L Quick Information

Product Type: Pre-Biased Bipolar Transistor
Canonical Name: DRA5114Y0L PNP Pre-Biased Transistor
Subcategory: Single Pre-Biased Transistors

DRA5114Y0L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DRA5114Y0L Estimated Pricing

Qty Low High
3,000+ $0.07 $0.07
6,000+ $0.06 $0.06
9,000+ $0.06 $0.06
15,000+ $0.05 $0.05
21,000+ $0.05 $0.05
30,000+ $0.05 $0.05
75,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

DRA5114Y0L Features

  • PNP pre-biased transistor with 50V breakdown voltage.
  • Maximum collector current rated at 100mA.
  • Power dissipation up to 150mW maximum.
  • Integrated 47kΩ base resistor for simplified design.
  • Surface mount package in SC-85 (SMini3-F2-B).

DRA5114Y0L Applications

  • Ideal for low-power switching and amplification circuits.
  • Used in portable electronic devices where space is limited.
  • Suitable for general purpose signal processing applications.
  • Reduces external component count in bias network designs.

DRA5114Y0L FAQs

4 frequently asked questions generated from this part’s specifications.
What is the package type for DRA5114Y0L?

The DRA5114Y0L comes in an SC-85 surface mount package, also known as SMini3-F2-B.

What is the maximum voltage rating of this transistor?

The maximum collector-emitter breakdown voltage is 50V.

Does the DRA5114Y0L have a built-in resistor?

Yes, it includes a 47 kΩ base resistor (R1).

What is the maximum collector current for this part?

The maximum collector current is 100 mA.

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