DRA5113Z0L The DRA5113Z0L is a PNP pre-biased transistor from Panasonic. It features a 50V collector-emitter breakdown voltage, 100mA collector current, and 150mW power dissipation in an SC-85 surface mount package.
Mfr Part #:

DRA5113Z0L

Available from 1 distributors
Mfr Name: Panasonic Electronic Components
Panasonic Electronic Components
The DRA5113Z0L is a PNP pre-biased transistor from Panasonic. It features a 50V collector-emitter breakdown voltage, 100mA collector current, and 150mW power dissipation in an SC-85 surface mount package.
✓ Total Stock: 1,220 pcs
$ Price Range: $0.05 - $0.07

DRA5113Z0L Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,220 pcs
1220 pcs On Request 1 On Request On Request On Request On Request On Request

DRA5113Z0L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Power
Resistor
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

DRA5113Z0L Description

Short technical summary and product information.

The DRA5113Z0L is a PNP pre-biased transistor manufactured by Panasonic Electronic Components. This device integrates a base resistor of 10 kΩ, simplifying circuit design by reducing external component count. It offers a collector-emitter breakdown voltage of 50 V and a collector current rating of 100 mA, with a maximum power dissipation of 150 mW.

 

The transistor provides a minimum DC current gain (hFE) of 30 at 5 mA collector current and 10 V collector-emitter voltage. The collector-emitter saturation voltage is limited to 250 mV at a base current of 500 µA and collector current of 10 mA, ensuring efficient switching performance.

 

Packaged in a surface mount SC-85 case (supplier device package SMini3-F2-B), the DRA5113Z0L is suitable for automated assembly processes. It is designed for general-purpose switching and amplification in low-power electronic circuits, such as consumer electronics and industrial controls.

DRA5113Z0L Quick Information

Product Type: Pre-Biased PNP Transistor
Canonical Name: PNP Pre-Biased Transistor (Surface Mount, SC-85/SMini3-F2-B)
Subcategory: Single, Pre-Biased

DRA5113Z0L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected

DRA5113Z0L Estimated Pricing

Qty Low High
3,000+ $0.07 $0.07
6,000+ $0.06 $0.06
9,000+ $0.06 $0.06
15,000+ $0.05 $0.05
21,000+ $0.05 $0.05
30,000+ $0.05 $0.05
75,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

DRA5113Z0L Features

  • PNP pre-biased transistor with integrated base resistor.
  • Rated for 50V collector-emitter breakdown voltage.
  • Supports 100mA continuous collector current.
  • Maximum 150mW power dissipation.
  • Surface mount in SC-85 (SMini3-F2-B) package.

DRA5113Z0L Applications

  • Ideal for signal switching and small-signal amplification.
  • Suited for low-power electronic circuits.
  • Common in consumer electronics and industrial control.
  • Reduces external component count with built-in resistor.

DRA5113Z0L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the DRA5113Z0L?

50 V

What package is the DRA5113Z0L available in?

SC-85 (SMini3-F2-B) surface mount package

What is the base resistor value in the DRA5113Z0L?

10 kΩ

What is the DC current gain (hFE) of the DRA5113Z0L?

Minimum 30 at Ic=5 mA, Vce=10 V

What is the collector-emitter saturation voltage of the DRA5113Z0L?

250 mV maximum at Ib=500 µA, Ic=10 mA

What is the power dissipation of the DRA5113Z0L?

150 mW

Is the DRA5113Z0L RoHS compliant?

The part is listed as RoHS3 Compliant, but this data is unverified.

Home
Account

Categories