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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,200 pcs
|
4200 pcs | On Request | 1 | On Request | On Request | 1332+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 1928+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Base-Emitter Turn-On Voltage (VBE(on)) | |
| Case Material | |
| Collector Cutoff Current (Maximum @ VCB=150 V, IE=0) | |
| Collector Cutoff Current (Maximum @ VCB=150 V, IE=0, TA=100 °C) | |
| Collector-Base Breakdown Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (VCEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ IC=10 mA, VCE=5 V) | |
| DC Current Gain (hFE) (Minimum @ IC=10 µA, VCE=5 V) | |
| DC Current Gain Hfe (Minimum @ Ic=3 A, Vce=5 V) | |
| Emitter Cutoff Current (Iebo) | |
| Emitter-Base Breakdown Voltage (VEBO) | |
| Flammability Rating | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Peak Pulse Collector Current | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Terminal Finish | |
| Terminal Finish Solderability | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Maximum @ Ic=0.1 A, Ib=5 mA) | |
| Vce Saturation (Maximum @ Ic=0.5 A, Ib=50 mA) | |
| Vce Saturation (Maximum @ Ic=1 A, Ib=100 mA) | |
| Voltage | |
| Weight |
The DPLS4140E-13 is a PNP surface mount bipolar junction transistor manufactured by Diodes Incorporated. It is designed for medium power switching and amplification applications. The transistor features a collector-emitter breakdown voltage (VCEO) of -140 V minimum and a collector-base breakdown voltage (VCBO) of -180 V minimum. The continuous collector current rating is -4 A, with a peak pulse current capability of -10 A.
The device offers a DC current gain (hFE) of minimum 100 at Ic=1A, Vce=5V, and up to 45 at 3A. Saturation voltage is very low, with VCE(sat) as low as -40 mV at Ic=0.1A. The transition frequency (fT) is typically 150 MHz at 100 mA, making it suitable for moderate frequency switching. The transistor is housed in a SOT-223 surface mount package with a molded plastic case rated UL 94V-0. Moisture sensitivity level is 1 (unlimited) per J-STD-020D.
This transistor is lead-free by design and RoHS compliant, with matte tin finish terminals. The maximum power dissipation is 1 W when mounted on FR-4 PCB, and the junction-to-ambient thermal resistance is 125 °C/W. The operating and storage temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.00 | $1.00 |
| 10+ | $0.46 | $0.46 |
| 100+ | $0.40 | $0.40 |
| 500+ | $0.36 | $0.36 |
| 1,000+ | $0.31 | $0.31 |
| 2,500+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating and storage temperature range is -55°C to +150°C (junction temperature).
The device is housed in a SOT-223 surface mount package (also referred to as TO-261-4, TO-261AA).
Yes, the datasheet confirms it is Lead Free By Design and RoHS Compliant. No purposefully added lead.
The minimum VCEO is -140 V, with typical value around -190 V.
The minimum hFE is 100 at Ic=1A, Vce=5V. Also specified as 100 at 10mA, 45 at 3A, and 12 at 10A.
The typical transition frequency is 150 MHz at Ic=100mA, Vce=10V.
The maximum continuous collector current is -4 A DC, with a peak pulse current of -10 A.