DPLS315E-13

The DPLS315E-13 is a PNP surface mount transistor from Diodes Incorporated, designed for medium power switching and amplification applications. It features a low collector-emitter saturation resistance of 70 mΩ at 3A, enabling efficient operation in low Vce(sat) circuits. The device offers a high DC current gain with a minimum hFE of 500 at 10mA, 400 at 1A, and 300 at 2A, ensuring consistent performance across a range of collector currents. Key electrical specifications include a collector-emitter breakdown voltage of -15 V minimum, continuous collector current rating of 3 A, and peak pulse current capability of 8 A. The transistor has a power dissipation of 1 W when mounted on FR-4 PCB at 25°C ambient, with a thermal resistance of 125°C/W junction-to-ambient. Operating junction temperature range is -55°C to 150°C. The device is housed in a SOT-223 surface mount package with matte tin plated terminals and is rated for moisture sensitivity level 1 per J-STD-020D. It is RoHS compliant and lead-free by design. The part is complementary to the NPN type DNLS412E, also from Diodes Incorporated. Note: This part is not recommended for new designs; Diodes Incorporated recommends the FZT788B as a replacement.