DNLS350E-13 DNLS350E-13 is an NPN bipolar junction transistor from Diodes Incorporated with 50V collector-emitter voltage and 3A continuous collector current. It comes in a surface-mount SOT223-3 package.
Mfr Part #:

DNLS350E-13

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DNLS350E-13 is an NPN bipolar junction transistor from Diodes Incorporated with 50V collector-emitter voltage and 3A continuous collector current. It comes in a surface-mount SOT223-3 package.
Total Stock: 12,875 pcs
$ Price Range: $0.16 - $0.90

DNLS350E-13 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,520 pcs
8520 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,355 pcs
4355 pcs On Request 1 On Request On Request 20+ On Request On Request

DNLS350E-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
AEC-Q101
Automotive Grade
Base Current - Peak (Ibm)
Case / Package
Collector Current Pulse (ICM)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD HBM
ESD MM
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Power Dissipation (PD) (Maximum @ 25 mm x 25 mm 2 oz copper)
Power Dissipation (PD) (Maximum @ 50 mm x 50 mm 2 oz copper)
Reel Size
Standard Package Quantity
Storage Temperature
Supplier Device Package
Tape & Reel
Tape Width
Termination
Thermal Resistance, Junction to Ambient (RθJA) (@ 25 mm x 25 mm 2 oz copper)
Thermal Resistance, Junction to Ambient (RθJA) (@ 50 mm x 50 mm 2 oz copper)
Thermal Resistance, Junction to Ambient (RθJA) (@ Standard (unverified)
Thermal Resistance, Junction to Leads (RθJL)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

DNLS350E-13 Description

Short technical summary and product information.

The DNLS350E-13 is an NPN bipolar junction transistor from Diodes Incorporated designed for medium power switching and amplification applications. It features a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 3A, with a pulse current capability of 5A. The transistor offers a low collector-emitter saturation voltage of 290mV at 200mA base current and 2A collector current, and a minimum DC current gain (hFE) of 100 at 2A and 2V.

 

This device is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive and industrial applications. It is RoHS3 compliant, lead-free, and halogen and antimony free, meeting modern environmental requirements. The operating junction temperature range is -55°C to 150°C, and power dissipation is rated at 1W (existing_db) with datasheet values of 3W on a 50mm x 50mm 2oz copper pad and 2W on a 25mm x 25mm 2oz copper pad.

 

The DNLS350E-13 is packaged in a surface-mount SOT223 (TO-261-4, TO-261AA) case with matte tin plated leads. It is supplied on a 13-inch reel with 12mm tape width, containing 2500 pieces per reel. The complementary PNP type is the DPLS350E.

DNLS350E-13 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: DNLS350
Canonical Name: DNLS350E-13 NPN Bipolar Junction Transistor
Subcategory: Single BJT

DNLS350E-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DNLS350E-13 Estimated Pricing

Qty Low High
1+ $0.90 $0.90
10+ $0.60 $0.60
100+ $0.38 $0.38
500+ $0.25 $0.25
1,000+ $0.20 $0.20
2,500+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

DNLS350E-13 Features

  • NPN transistor with 50V collector-emitter voltage.
  • 3A continuous collector current capability.
  • Low saturation voltage of 290mV at 2A.
  • AEC-Q101 qualified for automotive reliability.
  • Surface mount SOT223-3 package.

DNLS350E-13 Applications

  • Ideal for medium power switching circuits.
  • Used in automotive electronic control modules.
  • Suitable for power amplification stages.
  • Works in DC-DC converter applications.

DNLS350E-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the DNLS350E-13?

The collector-emitter voltage (VCEO) is 50V.

What is the maximum continuous collector current?

The continuous collector current (IC) is 3A, with a pulse current capability of 5A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the DNLS350E-13 available in?

It is available in a surface-mount SOT223 (TO-261-4, TO-261AA) package.

Is the DNLS350E-13 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 100 at a collector current of 2A and collector-emitter voltage of 2V.

What is the transition frequency of the DNLS350E-13?

The transition frequency (fT) is 100 MHz.

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