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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,003 pcs
|
9003 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
2,300 pcs
|
2300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Case Material | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Peak Pulse Collector Current (ICM) | |
| Power | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Terminal Finish | |
| Thermal Resistance Junction to Ambient (RθJA) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Weight | |
| hfe (Minimum @ IC = 1 A, VCE = 5 V) | |
| hfe (Minimum @ IC = 2 A, VCE = 5 V) | |
| hfe (Minimum/Maximum @ IC = 1 mA, VCE = 5 V) | |
| vcesat (Maximum @ IC = 500 mA, IB = 50 mA) |
The DNBT8105-7 is an NPN bipolar junction transistor from Diodes Incorporated designed for medium power amplification and switching applications. It features a collector-emitter voltage (VCEO) of 60V and a continuous collector current rating of 1A, with a peak pulse current capability of 2A.
The transistor offers a DC current gain (hFE) ranging from 100 to 300 at low current (1mA) and a minimum of 100 at 500mA, ensuring consistent performance across operating conditions. The saturation voltage is low, with VCE(SAT) typically 250mV at 500mA, making it efficient for switching.
The device is housed in a surface-mount SOT-23-3 package, which is lightweight (0.008g) and suitable for compact designs. It is RoHS compliant and lead-free, with a moisture sensitivity level of 1 (unlimited). The operating temperature range is -55°C to 150°C, and thermal resistance is 209°C/W.
This transistor is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive applications. It is a complementary version of the DPBT8105 PNP transistor. The part is supplied in tape and reel packaging with 3000 units per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.41 | $0.41 |
| 10+ | $0.23 | $0.23 |
| 100+ | $0.16 | $0.16 |
| 500+ | $0.13 | $0.13 |
| 3,000+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The VCEO is 60V minimum.
It is available in a surface mount SOT-23-3 package.
-55°C to 150°C (junction temperature).
Yes, it is RoHS compliant and lead-free by design.
hFE ranges from 100 to 300 at 1mA, with a minimum of 100 at 500mA and 80 at 1A.
Continuous collector current is 1A, with peak pulse current of 2A.
600mW at 25°C ambient.