DN3525N8-G The DN3525N8-G is an N-Channel depletion-mode vertical DMOS FET from Microchip Technology. It offers a 250V drain-to-source breakdown voltage, 360mA continuous drain current, and a maximum on-resistance of 6 Ohms in a surface-mount TO-243AA (SOT-89) package.
Mfr Part #:

DN3525N8-G

Available from 3 distributors
Mfr Name: Microchip Technology
Microchip Technology
The DN3525N8-G is an N-Channel depletion-mode vertical DMOS FET from Microchip Technology. It offers a 250V drain-to-source breakdown voltage, 360mA continuous drain current, and a maximum on-resistance of 6 Ohms in a surface-mount TO-243AA (SOT-89) package.
✓ Total Stock: 25,581 pcs
$ Price Range: $0.88

DN3525N8-G Available from 3 distributors

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23,536 pcs
23536 pcs On Request 1 On Request On Request 2020+ On Request On Request
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2,000 pcs
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45 pcs
45 pcs On Request 1 On Request On Request On Request On Request 2026-02-23 21:33:16

DN3525N8-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)

DN3525N8-G Description

Short technical summary and product information.

The DN3525N8-G is an N-Channel depletion-mode vertical DMOS FET manufactured by Microchip Technology. Depletion-mode devices are normally-on transistors that conduct current with zero gate-to-source bias, making them suitable for applications requiring a normally-on switch, such as solid-state relays, constant-current sources, and telecommunication switches.

 

Key electrical specifications include a drain-to-source breakdown voltage of 250V, continuous drain current of 360mA, and a maximum drain-source on-resistance of 6 Ohms at 200mA drive. The device features low input capacitance (350 pF maximum at 25V), low input and output leakage, and fast switching speeds. The gate-source threshold voltage range is -1.5V to -3.5V, and the device can operate over a junction temperature range of -55°C to +150°C.

 

The DN3525N8-G is housed in a TO-243AA package, also known as SOT-89, which is designed for surface-mount assembly. The maximum power dissipation is 1.6W at ambient temperature. The device is free from thermal runaway and secondary breakdown, characteristic of MOS structures. It is RoHS3 compliant and MSL level 1 (unlimited).

DN3525N8-G Quick Information

Product Type: Single N-Channel MOSFET
Series: DN3525
Canonical Name: DN3525N8-G N-Channel Depletion-Mode Vertical DMOS FET
Subcategory: Depletion-Mode N-Channel MOSFET

DN3525N8-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DN3525N8-G Estimated Pricing

Qty Low High
1+ $0.88 $0.88
2,000+ $0.88 $0.88

Estimated market price range - modelled values for guidance only, not live distributor offers.

DN3525N8-G Features

  • Depletion-mode normally-on vertical DMOS FET.
  • 250V drain-to-source breakdown voltage rating.
  • 360mA continuous drain current capability.
  • 6 Ohm maximum drain-source on-resistance.
  • Surface-mount TO-243AA (SOT-89) package.

DN3525N8-G Applications

  • Normally-on switches and solid-state relays.
  • Constant-current source circuits.
  • Power supply control and telecommunication switches.
  • Converter and general purpose switching applications.

DN3525N8-G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the package type of the DN3525N8-G?

The DN3525N8-G is offered in a TO-243AA surface mount package, also known as SOT-89.

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to +150°C.

Is the DN3525N8-G RoHS compliant?

The part is listed as RoHS3 Compliant, but this status is unverified low-confidence data.

What is the drain-source on-resistance of the DN3525N8-G?

The maximum drain-source on-resistance is 6 Ohms at ID = 200mA and VGS = 0V.

What is the drain current rating?

The continuous drain current rating is 360mA at junction temperature.

What is the gate threshold voltage of this device?

The gate-source threshold voltage ranges from -1.5V to -3.5V at VDS = 15V, ID = 1mA.

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