Mfr Part #:

DN3145N8-G

N-Channel depletion mode MOSFET with 450V drain-source voltage and 100mA continuous drain current. Surface mount package TO-243AA (SOT-89).

✓ Total Stock: 23,535 pcs

$ Price Range: $0.90

DN3145N8-G Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	23,535 pcs On Request	23535 pcs	On Request	1	On Request	On Request	2020+	On Request	On Request

DN3145N8-G Description

Short technical summary and product information.

The DN3145N8-G is an N-Channel depletion mode MOSFET manufactured by Microchip Technology. It features a drain-source voltage rating of 450V and a continuous drain current of 100mA. The device has a maximum on-resistance of 60 Ohms at a gate-source voltage of 0V, typical for depletion mode operation. Input capacitance is 120pF at 25V drain-source voltage. Maximum power dissipation is 1.3W at ambient temperature. The operating temperature range is -55°C to 150°C junction temperature.

The MOSFET is housed in a surface mount TO-243AA package, also known as SOT-89, suitable for automated assembly. The depletion mode characteristic means the device is normally on with zero gate voltage, requiring a negative gate-source voltage to turn off. This makes it suitable for normally-on switch applications and current source circuits.

Typical applications include high voltage switching, power management in telecom and industrial systems, and as a constant current source. The device is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).

DN3145N8-G Quick Information

Product Type: MOSFET

Canonical Name: Microchip Technology DN3145N8-G N-Channel MOSFET

Subcategory: N-Channel MOSFET

DN3145N8-G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

DN3145N8-G Estimated Pricing

Qty	Low	High
1+	$0.90	$0.90
2,000+	$0.90	$0.90

Estimated market price range - modelled values for guidance only, not live distributor offers.

DN3145N8-G Features

N-Channel depletion mode MOSFET.
450V drain-source voltage rating.
100mA continuous drain current.
Surface mount TO-243AA package.
60 Ohm on-resistance at 0V gate drive.

DN3145N8-G Applications

Used in high voltage switching circuits.
Suitable for normally-on switch applications.
Ideal for low current power management.
Applicable in telecom and industrial systems.

DN3145N8-G FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the DN3145N8-G?

The drain-source voltage (Vdss) is 450V.

What is the continuous drain current rating?

The continuous drain current (Id) is 100mA at junction temperature.

What package is the DN3145N8-G available in?

It is available in a surface mount TO-243AA package (SOT-89).

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (junction).

Is the DN3145N8-G RoHS compliant?

The part is listed as RoHS3 compliant, but this is unverified.

What is the gate-source voltage maximum?

The maximum gate-source voltage (Vgs) is ±20V.

What is the power dissipation of this MOSFET?

Maximum power dissipation is 1.3W at ambient temperature.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Microchip Technology
Current	100 mA (Tj)
Drain to Source Voltage (Vdss)	450 V
Drive Voltage (Max Rds On, Min Rds On)	0V
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	120 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	1.3W (Ta)
Rds On (Max) @ Id, Vgs	60 Ohm @ 100mA, 0V
Supplier Device Package	TO-243AA (SOT-89)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V