| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23,534 pcs
|
23534 pcs | On Request | 1 | On Request | On Request | 2020+ | On Request | On Request | |
|
1,597 pcs
|
1597 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) |
The DN3135N8-G is an N-channel depletion-mode (normally-on) vertical DMOS FET manufactured by Microchip Technology. It utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process, combining the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient inherent in MOS devices. This device is free from thermal runaway and thermally induced secondary breakdown.
Key electrical specifications include a maximum drain-to-source voltage of 350V, a continuous drain current of 135mA (at Tj), and a maximum on-resistance of 35 Ohms at VGS = 0V and ID = 150mA. The gate-to-source off voltage ranges from -1.5V to -3.5V, and the maximum gate-to-source voltage is ±20V. Input capacitance is typically 120pF at VDS = 25V. The device is designed for a maximum power dissipation of 1.3W at ambient temperature and operates over a junction temperature range of -55°C to +150°C.
This depletion-mode MOSFET is suited for normally-on switch applications, solid-state relays, converters, linear amplifiers, constant-current sources, and power supply circuits. The part is packaged in a surface-mount TO-243AA case, also designated as SOT-89, which provides a compact footprint for automated assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.81 | $0.81 |
| 2,000+ | $0.81 | $0.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The DN3135N8-G is supplied in a surface-mount TO-243AA package, also designated as SOT-89.
The maximum drain-to-source voltage (Vdss) is 350V.
The operating junction temperature range is -55°C to +150°C.
The part is listed as RoHS3 Compliant, but this status has not been verified.
It is an N-channel depletion-mode MOSFET using vertical DMOS technology.
The maximum on-resistance (Rds On) is 35 Ohms at VGS = 0V and ID = 150mA.
The maximum drain current is 135mA (at junction temperature).