| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) |
The DN3135K1-G is a low-threshold, depletion-mode N-channel vertical DMOS FET manufactured by Microchip Technology using an advanced silicon gate process. This normally-on transistor offers high input impedance, low input capacitance, and fast switching speeds while being free from secondary breakdown. It is designed for applications requiring very low threshold voltage and high breakdown voltage.
Key electrical specifications include a minimum drain-source breakdown voltage of 350V at VGS = -5V and ID = 100 µA, maximum drain current of 72mA (Tj), and maximum on-resistance of 35 Ohm at ID = 150mA and VGS = 0V. The gate-source voltage rating is ±20V, with a gate-to-source off voltage range of -1.5V to -3.5V at VDS = 15V and ID = 10 µA. Input capacitance is 120 pF maximum at VDS = 25V. Power dissipation is rated at 360 mW (Ta), with an operating junction temperature range of -55°C to 150°C.
The device is housed in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59), suitable for compact PCB designs. Typical applications include normally-on switches, solid-state relays, converters, linear amplifiers, constant-current sources, power supply circuits, and telecommunications equipment.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.69 | $0.69 |
| 3,000+ | $0.69 | $0.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 350V at VGS = -5V and ID = 100 µA.
The maximum on-resistance is 35 Ohms at ID = 150mA and VGS = 0V.
It is available in a surface-mount SOT-23-3 package, also known as TO-236-3 or SC-59.
The operating junction temperature range is -55°C to 150°C.
The part is marked as RoHS3 Compliant, but this has not been independently verified.
The maximum gate-source voltage is ±20V.
The maximum input capacitance (Ciss) is 120 pF at VDS = 25V.