DN2625K4-G The DN2625K4-G is an N-Channel depletion-mode MOSFET from Microchip Technology. It features a 250V drain-source breakdown voltage and 1.1A continuous drain current in a TO-252 surface-mount package.
Mfr Part #:

DN2625K4-G

Available from 2 distributors
Mfr Name: Microchip Technology
Microchip Technology
The DN2625K4-G is an N-Channel depletion-mode MOSFET from Microchip Technology. It features a 250V drain-source breakdown voltage and 1.1A continuous drain current in a TO-252 surface-mount package.
✓ Total Stock: 5,003 pcs
$ Price Range: $1.63

DN2625K4-G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,003 pcs
1003 pcs On Request 1 On Request On Request 21+ On Request On Request

DN2625K4-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)

DN2625K4-G Description

Short technical summary and product information.

The DN2625K4-G is an N-Channel depletion-mode (normally-on) vertical DMOS FET from Microchip Technology. It utilizes an advanced vertical DMOS structure and silicon gate manufacturing process, providing high input impedance and positive temperature coefficient. Key electrical specifications include a drain-source breakdown voltage of 250V, continuous drain current of 1.1A (at Tj), and maximum on-resistance of 3.5 Ohm at 1A and 0V gate-source. The device features very low gate threshold voltage, low switching losses, and low effective output capacitance, making it suitable for inductive loads. It is designed for source-driven applications. The operating junction temperature range is -55°C to 150°C. The MOSFET is offered in a TO-252-3 (DPak) surface-mount package, also known as SC-63. Typical applications include medical ultrasound beamforming, piezoelectric transducer waveform drivers, solid-state relays, constant current sources, and high-speed arbitrary waveform generators.

DN2625K4-G Quick Information

Product Type: N-Channel MOSFET
Series: DN2625
Canonical Name: DN2625K4-G N-Channel Depletion-Mode Vertical DMOS FET
Subcategory: Single MOSFET

DN2625K4-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DN2625K4-G Estimated Pricing

Qty Low High
1+ $1.63 $1.63
2,000+ $1.63 $1.63

Estimated market price range - modelled values for guidance only, not live distributor offers.

DN2625K4-G Features

  • N-channel depletion-mode vertical DMOS FET.
  • 250V drain-source breakdown voltage.
  • 1.1A continuous drain current.
  • Low on-resistance of 3.5 Ohm.
  • Surface-mount TO-252 D-PAK package.

DN2625K4-G Applications

  • Medical ultrasound beamforming applications.
  • Piezoelectric transducer waveform drivers.
  • Solid-state relays and constant current sources.
  • High-speed arbitrary waveform generators.

DN2625K4-G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DN2625K4-G?

250V.

What is the continuous drain current of the DN2625K4-G?

1.1A (at Tj).

What is the on-resistance of the DN2625K4-G?

3.5 Ohm maximum at 1A drain current and 0V gate-source voltage.

What is the operating temperature range of the DN2625K4-G?

-55°C to 150°C (junction).

What package is the DN2625K4-G available in?

TO-252-3 (DPak) surface-mount package.

Is the DN2625K4-G RoHS compliant?

RoHS3 Compliant (unverified).

What is the gate charge of the DN2625K4-G?

7.04 nC maximum at 1.5V gate-source voltage.

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