DN2625DK6-G The DN2625DK6-G is a dual N-channel depletion-mode MOSFET from Microchip Technology. It features a 250V drain-source breakdown voltage, 1.1A continuous drain current, and 3.5 Ohm on-resistance in an 8-VDFN package.
Mfr Part #:

DN2625DK6-G

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The DN2625DK6-G is a dual N-channel depletion-mode MOSFET from Microchip Technology. It features a 250V drain-source breakdown voltage, 1.1A continuous drain current, and 3.5 Ohm on-resistance in an 8-VDFN package.
✓ Total Stock: 23,531 pcs
$ Price Range: $2.52 - $3.15

DN2625DK6-G Available from 1 distributor

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23,531 pcs
23531 pcs On Request 1 On Request On Request 2020+ On Request On Request

DN2625DK6-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology

DN2625DK6-G Description

Short technical summary and product information.

The DN2625DK6-G is a dual N-channel depletion-mode vertical DMOS FET from Microchip Technology. It integrates two MOSFETs in a single 8-lead DFN package with exposed pad for thermal management. The device utilizes an advanced vertical DMOS structure and silicon gate process, offering high input impedance and positive temperature coefficient.

 

Electrical characteristics include a maximum drain-source voltage of 250V, continuous drain current of 1.1A, and on-resistance of 3.5 Ohm at 1A and 0V gate drive. Input capacitance is 1000 pF at 25V, and gate charge is 7.04 nC at 1.5V. The device operates over a junction temperature range of -55°C to 150°C.

 

As a depletion-mode (normally-on) transistor, the DN2625DK6-G is suitable for applications requiring a normally-on switch, such as solid-state relays, constant current sources, and power supply circuits. The datasheet also lists applications in medical ultrasound beamforming, ultrasonic array-focusing transmitters, piezoelectric transducer waveform drivers, and high-speed arbitrary waveform generators.

 

The device is supplied in an 8-VDFN exposed pad package (8-DFN 5x5mm) for surface mount assembly. It is RoHS3 compliant and has an MSL rating of 1 (unlimited).

DN2625DK6-G Quick Information

Product Type: Dual N-Channel MOSFET Array
Series: DN2625
Canonical Name: DN2625DK6-G Dual N-Channel Depletion-Mode MOSFET Array
Subcategory: Arrays

DN2625DK6-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DN2625DK6-G Estimated Pricing

Qty Low High
1+ $3.15 $3.15
10+ $2.93 $2.93
25+ $2.76 $2.76
100+ $2.52 $2.52

Estimated market price range - modelled values for guidance only, not live distributor offers.

DN2625DK6-G Features

  • Dual N-channel depletion-mode MOSFET array.
  • 250V drain-source breakdown voltage rating.
  • 1.1A continuous drain current capability.
  • 3.5 Ohm on-resistance at 1A, 0V.
  • 8-VDFN surface mount package with exposed pad.

DN2625DK6-G Applications

  • Medical ultrasound beamforming transmitter circuits.
  • Piezoelectric transducer waveform drivers.
  • High-speed arbitrary waveform generators.
  • Normally-on solid-state relay switches.
  • Constant current source power supplies.

DN2625DK6-G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

250V maximum.

What is the package type?

8-VDFN Exposed Pad (8-DFN 5x5mm).

What is the operating temperature range?

-55°C to 150°C (junction).

Is this device RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the configuration?

2 N-Channel (Dual).

What is the gate charge?

7.04 nC at 1.5V.

What is the mounting type?

Surface Mount.

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