DN2535N3-G The DN2535N3-G is a 350V, 120mA N-Channel Depletion-Mode Vertical DMOS FET in a TO-92 package. It features low on-resistance (25 Ohm) and low input capacitance (300 pF).
Mfr Part #:

DN2535N3-G

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
The DN2535N3-G is a 350V, 120mA N-Channel Depletion-Mode Vertical DMOS FET in a TO-92 package. It features low on-resistance (25 Ohm) and low input capacitance (300 pF).
✓ Total Stock: 23,526 pcs
$ Price Range: $0.91

DN2535N3-G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
23,526 pcs
23526 pcs On Request 1 On Request On Request 2020+ On Request On Request

DN2535N3-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)

DN2535N3-G Description

Short technical summary and product information.

The DN2535N3-G is a low-threshold Depletion-mode (normally-on) N-Channel Vertical DMOS FET manufactured by Microchip Technology. It combines an advanced vertical DMOS structure with a well-proven silicon-gate process, delivering high input impedance, low input capacitance, and fast switching speeds. The device is free from thermal runaway and secondary breakdown.

 

Key electrical specifications include a minimum drain-to-source breakdown voltage of 350V, a continuous drain current of 120mA, and a maximum on-resistance of 25 Ohm at VGS = 0V. The gate-to-source voltage range is ±20V, and the input capacitance is typically 300 pF. The device operates over a junction temperature range of -55°C to +150°C.

 

The DN2535N3-G is supplied in a through-hole TO-92 package (also known as TO-226-3). It is RoHS3 compliant and has an MSL rating of 1 (unlimited). This part is suitable for normally-on switches, solid-state relays, converters, linear amplifiers, constant-current sources, and power supply circuits.

DN2535N3-G Quick Information

Product Type: MOSFET
Canonical Name: DN2535N3-G N-Channel Depletion-Mode Vertical DMOS FET, 350V, 120mA, TO-92
Subcategory: Single MOSFET

DN2535N3-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DN2535N3-G Estimated Pricing

Qty Low High
1+ $0.91 $0.91

Estimated market price range - modelled values for guidance only, not live distributor offers.

DN2535N3-G Features

  • 350V minimum drain-to-source breakdown voltage.
  • 120mA continuous drain current rating.
  • 25 Ohm maximum on-resistance at VGS = 0V.
  • 300 pF typical input capacitance.
  • Through-hole TO-92 package.

DN2535N3-G Applications

  • Normally-on switches and solid-state relays.
  • Linear amplifiers and constant-current sources.
  • Power supply and converter circuits.
  • Telecommunication switching applications.

DN2535N3-G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the DN2535N3-G?

The minimum drain-to-source breakdown voltage is 350V.

What is the maximum drain current of the DN2535N3-G?

The continuous drain current is 120mA at Tj = 25°C.

What is the on-resistance of the DN2535N3-G?

The maximum on-resistance is 25 Ohm at ID = 120mA and VGS = 0V.

What is the operating temperature range of the DN2535N3-G?

The operating junction temperature range is -55°C to +150°C.

What package does the DN2535N3-G come in?

The DN2535N3-G is supplied in a through-hole TO-92 package (TO-226-3).

Is the DN2535N3-G RoHS compliant?

Yes, the DN2535N3-G is listed as RoHS3 compliant, though this is unverified.

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