| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23,525 pcs
|
23525 pcs | On Request | 1 | On Request | On Request | 2020+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) |
DN2530N8-G is an N-channel, depletion-mode, normally-on vertical DMOS FET from Microchip Technology. It is built using an advanced vertical DMOS structure and a proven silicon-gate manufacturing process, resulting in high input impedance, low input capacitance, fast switching speeds, and low on-resistance. The device is free from thermal runaway and thermally-induced secondary breakdown.
This MOSFET is rated for a maximum drain-to-source voltage of 300V and a continuous drain current of 200mA. The maximum on-resistance is 12 Ohm at a drain current of 150mA and zero gate-source voltage. The gate-source threshold voltage ranges from -1.0V to -3.5V, and the maximum gate-source voltage is ±20V. It operates over a junction temperature range of -55°C to +150°C, with a maximum power dissipation of 1.6W at 25°C ambient.
The device is offered in a TO-243AA (SOT-89) surface-mount package. Typical applications include normally-on switches, solid-state relays, converters, linear amplifiers, constant current sources, power supply circuits, and telecom equipment.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.88 | $0.88 |
| 2,000+ | $0.88 | $0.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 300V.
The maximum continuous drain current is 200mA.
Maximum on-resistance is 12 Ohm at Id=150mA and Vgs=0V.
The gate-source threshold voltage ranges from -1.0V to -3.5V (tested at Vds=25V).
The operating junction temperature range is -55°C to +150°C.
The device is available in a TO-243AA (SOT-89) surface-mount package.
The part is listed as RoHS3 Compliant in the existing data, though this status is unverified.