| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23,520 pcs
|
23520 pcs | On Request | 1 | On Request | On Request | 2020+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) |
The DN1509N8-G is an N-channel, depletion-mode, vertical DMOS field-effect transistor from Microchip Technology. This device is designed for normally-on switching applications, offering high input impedance, low input capacitance, and fast switching speeds. With a drain-to-source voltage rating of 90V and a continuous drain current of 360mA, it is suitable for a variety of low-power switching and amplification tasks.
The MOSFET features a maximum on-resistance of 6Ω at a test condition of 200mA drain current and 0V gate-source voltage, which is typical for depletion-mode devices that operate with zero gate drive. The input capacitance is specified at a maximum of 150pF at 25V drain-source voltage, contributing to efficient high-frequency performance. The device can handle up to 1.6W power dissipation at ambient temperature and operates over a junction temperature range of -55°C to 150°C.
Packaged in a TO-243AA (SOT-89) surface-mount package, the DN1509N8-G is suitable for compact PCB designs. The depletion-mode characteristic makes it ideal for normally-on switches, constant current sources, and linear amplifiers. Its low leakage and high input impedance also support battery-operated systems and telecom applications.
This component is part of Microchip's DN1509 series, which utilizes an advanced vertical DMOS structure and silicon-gate manufacturing process, ensuring reliable performance and freedom from thermal runaway and secondary breakdown.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.95 | $0.95 |
| 2,000+ | $0.95 | $0.95 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is rated at 90V.
The maximum continuous drain current is 360mA, specified at junction temperature.
The maximum on-resistance is 6Ω, measured at a drain current of 200mA and gate-source voltage of 0V.
The operating junction temperature range is -55°C to 150°C.
The device is available in a TO-243AA (SOT-89) surface-mount package.
The device is marked as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.