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DN1509K1-G N-Channel depletion mode vertical DMOS FET with 90V drain-to-source voltage, 200mA drain current, and 6 Ohm on-resistance. Surface mount in SOT-23-5 package.
Mfr Part #:

DN1509K1-G

Available from 1 distributors
Mfr Name: Microchip Technology
Microchip Technology
N-Channel depletion mode vertical DMOS FET with 90V drain-to-source voltage, 200mA drain current, and 6 Ohm on-resistance. Surface mount in SOT-23-5 package.
✓ Total Stock: 23,519 pcs
$ Price Range: $0.76

DN1509K1-G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
23,519 pcs
On Request
23519 pcs On Request 1 On Request On Request 2020+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DN1509K1-G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Conflict Minerals
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
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DN1509K1-G Description

Short technical summary and product information.

The DN1509K1-G is an N-channel depletion mode vertical DMOS FET from Microchip Technology. It is designed for applications requiring a normally-on transistor with high input impedance, low input capacitance, and fast switching speeds.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 90V, a drain current of 200mA (at Tj), and a maximum drain-source on-resistance (Rds On) of 6 Ohms at Id = 200mA and Vgs = 0V. The gate-to-source voltage maximum is ±20V. The device is a depletion mode MOSFET, meaning it conducts at zero gate voltage and requires negative gate voltage to turn off.

 

The part is supplied in a surface-mount SOT-23-5 package (also known as SC-74A, SOT-753). It supports an operating junction temperature range of -55°C to +150°C and a maximum power dissipation of 490mW at ambient temperature.

DN1509K1-G Quick Information

Product Type: Discrete Semiconductor
Series: DN1509
Canonical Name: DN1509K1-G N-Channel Depletion Mode Vertical DMOS FET
Subcategory: Single N-Channel

DN1509K1-G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

DN1509K1-G Estimated Pricing

Qty Low High
1+ $0.76 $0.76
3,000+ $0.76 $0.76

Estimated market price range - modelled values for guidance only, not live distributor offers.

DN1509K1-G Features

  • Depletion mode N-channel vertical DMOS FET.
  • 90V drain-to-source voltage rating.
  • 200mA continuous drain current capability.
  • 6 Ohm maximum on-resistance at 0V gate drive.
  • Surface mount SOT-23-5 package.

DN1509K1-G Applications

  • Normally-on switch circuits.
  • Battery operated system power management.
  • Constant current source designs.
  • Linear amplifier stages.
  • Telecom equipment power interfaces.

DN1509K1-G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the DN1509K1-G?

The drain-to-source voltage is 90V.

What is the maximum drain current?

The maximum drain current is 200mA at junction temperature.

What is the on-resistance?

The maximum on-resistance is 6 Ohms at Id = 200mA and Vgs = 0V.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

What package does the DN1509K1-G come in?

The device is in an SOT-23-5 package (also SC-74A, SOT-753).

Is the DN1509K1-G RoHS compliant?

RoHS status is listed as RoHS3 Compliant, but this information is unverified.

What is the maximum power dissipation?

The maximum power dissipation is 490mW at ambient temperature.

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