DMTH8028LPSWQ-13 The DMTH8028LPSWQ-13 is an 80V N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a maximum drain current of 41.7A at 25°C and a low on-resistance of 25mΩ at VGS=10V.
Mfr Part #:

DMTH8028LPSWQ-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMTH8028LPSWQ-13 is an 80V N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a maximum drain current of 41.7A at 25°C and a low on-resistance of 25mΩ at VGS=10V.
✓ Total Stock: 53,520 pcs
$ Price Range: $0.47 - $1.15

DMTH8028LPSWQ-13 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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53,520 pcs
53520 pcs On Request 1 On Request On Request On Request On Request On Request

DMTH8028LPSWQ-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMTH8028LPSWQ-13 Description

Short technical summary and product information.

The DMTH8028LPSWQ-13 is an 80V N-channel enhancement mode MOSFET in the PowerDI5060-8 package. It is AEC-Q101 qualified for automotive applications and supports a maximum drain-source voltage of 80V. The device handles a continuous drain current of 41.7A at 25°C and 29.5A at 100°C, with a pulsed current capability of 166.8A. On-resistance is a maximum of 25mΩ at VGS=10V and 41mΩ at VGS=4.5V, enabling efficient power conversion.

 

The MOSFET features a low input capacitance of 641pF and a gate charge of 10.4nC, contributing to fast switching speeds. It is rated for a junction temperature range of -55°C to 175°C and offers a power dissipation of up to 65W at case temperature 25°C. The device is RoHS3 compliant, halogen-free, and includes a wettable flank for improved optical inspection.

 

Typical applications include synchronous rectifiers, DC-DC converters, power management functions, and backlighting circuits. The part is supplied in tape and reel packaging with a standard quantity of 2500 units per reel.

DMTH8028LPSWQ-13 Quick Information

Product Type: N-Channel MOSFET
Series: DMTH8028LPSWQ
Canonical Name: N-Channel Enhancement Mode MOSFET, 80V, 41.7A, PowerDI5060-8
Subcategory: Single MOSFET

DMTH8028LPSWQ-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DMTH8028LPSWQ-13 Estimated Pricing

Qty Low High
1+ $1.15 $1.15
10+ $0.71 $0.71
100+ $0.47 $0.47
2,500+ $0.47 $0.47

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMTH8028LPSWQ-13 Features

  • Rated for 80V drain-source voltage.
  • Supports 41.7A continuous drain current.
  • Low on-resistance of 25mΩ maximum.
  • Automotive AEC-Q101 qualified MOSFET.
  • Wettable flank package for optical inspection.

DMTH8028LPSWQ-13 Applications

  • Ideal for synchronous rectifier circuits.
  • Used in automotive power management.
  • Suitable for DC-DC converter designs.
  • Good for backlighting applications.

DMTH8028LPSWQ-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMTH8028LPSWQ-13?

The maximum drain-source voltage is 80V.

What is the operating temperature range?

The junction temperature range is -55°C to 175°C.

What package is the DMTH8028LPSWQ-13 available in?

It is available in the PowerDI5060-8 surface mount package.

Is the DMTH8028LPSWQ-13 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the continuous drain current rating?

The continuous drain current is 41.7A at Tc=25°C and 29.5A at Tc=100°C.

What is the on-resistance?

The maximum on-resistance is 25mΩ at Vgs=10V, Id=5A and 41mΩ at Vgs=4.5V, Id=32.5A.

What is the gate charge?

The maximum gate charge is 10.4nC at Vgs=10V.

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