DMTH8003SPS-13 N-Channel enhancement mode MOSFET, 80V drain-source breakdown voltage, 120A maximum drain current, 3.9mOhm Rds(on) at Vgs=10V. Surface-mount PowerDI5060-8 package.
Mfr Part #:

DMTH8003SPS-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET, 80V drain-source breakdown voltage, 120A maximum drain current, 3.9mOhm Rds(on) at Vgs=10V. Surface-mount PowerDI5060-8 package.
✓ Total Stock: 200 pcs
$ Price Range: $0.82 - $2.84

DMTH8003SPS-13 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
200 pcs
200 pcs On Request 1 On Request On Request 18+ On Request On Request

DMTH8003SPS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMTH8003SPS-13 Description

Short technical summary and product information.

The DMTH8003SPS-13 is an N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It features a maximum drain-source breakdown voltage of 80V and a continuous drain current rating of 120A at Vgs=10V and Tc=25°C. The on-state resistance is typically 3.9mOhm at Vgs=10V and 6mOhm at Vgs=6V, minimizing conduction losses.

 

This MOSFET is rated for operating junction temperatures up to 175°C, making it suitable for high ambient temperature environments. The device is 100% tested for unclamped inductive switching, ensuring reliable and robust end applications. It comes in a thermally efficient PowerDI5060-8 surface-mount package with a matte tin annealed over copper leadframe finish.

 

Applications include switching power supplies, synchronous rectification, and DC-DC converters. The part is RoHS compliant, halogen and antimony free, and has a moisture sensitivity level of 1 per J-STD-020.

DMTH8003SPS-13 Quick Information

Product Type: MOSFET
Series: DMTH8003SPS
Canonical Name: DMTH8003SPS-13 N-Channel Enhancement Mode MOSFET 80V 120A PowerDI5060-8
Subcategory: Single MOSFET

DMTH8003SPS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMTH8003SPS-13 Estimated Pricing

Qty Low High
1+ $2.84 $2.84
10+ $1.46 $1.46
100+ $1.21 $1.21
500+ $1.05 $1.05
1,000+ $0.94 $0.94
2,500+ $0.90 $0.90
5,000+ $0.82 $0.82

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMTH8003SPS-13 Features

  • 80V drain-source breakdown voltage.
  • 120A continuous drain current rating.
  • 3.9mOhm low on-state resistance.
  • Surface-mount PowerDI5060-8 package.
  • Operating temperature up to 175°C.

DMTH8003SPS-13 Applications

  • Switching power supplies and converters.
  • Synchronous rectification circuits.
  • DC-DC converter applications.
  • High-efficiency power management.

DMTH8003SPS-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of the DMTH8003SPS-13?

80V

What is the continuous drain current rating?

120A at Vgs=10V and Tc=25°C, 97A at Vgs=6V and Tc=25°C.

What is the on-resistance (Rds(on))?

3.9mOhm typical at Vgs=10V and Id=120A; 6mOhm at Vgs=6V and Id=97A.

What package does the DMTH8003SPS-13 come in?

Surface-mount PowerDI5060-8 (Type K) package.

What is the operating temperature range?

-55°C to 175°C (junction temperature).

Is the DMTH8003SPS-13 RoHS compliant?

Yes, RoHS compliant, lead-free, halogen and antimony free.

What is the gate threshold voltage range?

Maximum 4V at Id=250µA.

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