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DMTH6016LSD-13 DMTH6016LSD-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, rated for 60V drain-source voltage and 7.6A continuous drain current. It features low on-resistance of 19.5mΩ maximum at 10V gate drive and is housed in a SO-8 surface-mount package.
Mfr Part #:

DMTH6016LSD-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMTH6016LSD-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, rated for 60V drain-source voltage and 7.6A continuous drain current. It features low on-resistance of 19.5mΩ maximum at 10V gate drive and is housed in a SO-8 surface-mount package.
Total Stock: 258 pcs
$ Price Range: $0.55 - $1.69

DMTH6016LSD-13 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
258 pcs
258 pcs On Request 1 On Request On Request 18+ On Request On Request

DMTH6016LSD-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

DMTH6016LSD-13 Description

Short technical summary and product information.

The DMTH6016LSD-13 is a dual N-channel enhancement mode MOSFET designed for high efficiency power management applications. It is rated for a maximum drain-source voltage of 60V and a continuous drain current of 7.6A at 25°C ambient temperature. The device achieves a low on-resistance of 19.5mΩ at VGS=10V, which minimizes conduction losses. Additionally, the gate charge is 17nC, enabling fast switching speeds. The MOSFET is built with advanced technology to provide robust performance, including 100% unclamped inductive switching for reliability. The operating junction temperature range is -55°C to 150°C (note datasheet specifies 175°C). The device is housed in a standard SO-8 surface-mount package (case material: green molding compound, UL 94V-0), making it suitable for automated assembly. It is fully RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards for automotive applications. The ordering code DMTH6016LSD-13 comes in tape and reel packaging with 2500 units per reel. Typical applications include load switches, adapter switches, and notebook PC power management.

DMTH6016LSD-13 Quick Information

Product Type: MOSFET Array
Canonical Name: DMTH6016LSD-13 — Dual N-Channel Enhancement Mode MOSFET, 60V, 7.6A, SO-8
Subcategory: Dual N-Channel MOSFET Array

DMTH6016LSD-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DMTH6016LSD-13 Estimated Pricing

Qty Low High
1+ $1.69 $1.69
10+ $1.06 $1.06
100+ $0.70 $0.70
500+ $0.55 $0.55
2,500+ $0.55 $0.55

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMTH6016LSD-13 Features

  • Dual N-channel enhancement mode MOSFET.
  • Rated for 60V drain-source voltage.
  • Continuous drain current up to 7.6A at 25°C.
  • Low on-resistance of 19.5mΩ at 10V gate drive.
  • Compact SO-8 surface-mount package.

DMTH6016LSD-13 Applications

  • Ideal for load switch applications.
  • Used in adapter switch circuits.
  • Suitable for notebook PC power management.
  • Automotive applications (AEC-Q101 qualified).

DMTH6016LSD-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C (TJ) per the provided specifications.

What is the package type?

SO-8 surface-mount package.

Is this component RoHS compliant?

Yes, it is fully RoHS compliant and halogen-free.

What is the maximum drain-source voltage?

60V.

What is the maximum continuous drain current?

7.6A at Ta=25°C with Vgs=10V.

What is the typical on-resistance?

19.5mΩ maximum at Vgs=10V and Id=10A.

What is the gate charge?

17nC maximum at Vgs=10V.

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