DMTH6005LFG-13 N-Channel enhancement mode MOSFET rated for 60V drain-source voltage and 100A continuous drain current at 25°C. Features low on-state resistance of 4.1mΩ at VGS=10V in a PowerDI3333-8 surface mount package.
Mfr Part #:

DMTH6005LFG-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET rated for 60V drain-source voltage and 100A continuous drain current at 25°C. Features low on-state resistance of 4.1mΩ at VGS=10V in a PowerDI3333-8 surface mount package.
✓ Total Stock: 4,020 pcs
$ Price Range: $0.56

DMTH6005LFG-13 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request

DMTH6005LFG-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMTH6005LFG-13 Description

Short technical summary and product information.

The DMTH6005LFG-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It is rated for a drain-source voltage of 60V and a continuous drain current of 100A at a case temperature of 25°C, with a maximum on-state resistance of 4.1mΩ at VGS=10V and ID=20A. The device also supports lower gate drive voltages, with RDS(on) of 6.3mΩ at VGS=6V and 7mΩ at VGS=4.5V, enabling flexible gate drive design.

 

The MOSFET features a maximum gate threshold voltage of 2.5V at ID=250µA and a maximum gate-source voltage of ±20V. It offers a total gate charge of 48.7nC at VGS=10V and an input capacitance of 3150pF at VDS=30V, supporting efficient switching performance. The device is rated for operation over a junction temperature range of -55°C to +175°C, making it suitable for high ambient temperature environments.

 

Packaged in the PowerDI3333-8 surface mount package, this MOSFET occupies only 33% of the board area of an SO-8 package, enabling higher density end products. The package is thermally efficient and weighs approximately 0.029 grams. The device is available in tape and reel packaging with a standard quantity of 3000 units per reel.

 

The DMTH6005LFG-13 is suitable for applications such as synchronous rectification, motor control, DC-DC converters, and general power management. Its low on-state resistance minimizes conduction losses, while the 100% unclamped inductive switching (UIS) test in production ensures reliability and robustness in end applications.

DMTH6005LFG-13 Quick Information

Product Type: MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Canonical Name: N-Channel 60V Enhancement Mode MOSFET, PowerDI3333-8
Subcategory: Single MOSFET

DMTH6005LFG-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

DMTH6005LFG-13 Estimated Pricing

Qty Low High
3,000+ $0.56 $0.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMTH6005LFG-13 Features

  • 60V drain-source voltage rating.
  • 100A continuous drain current at 25°C.
  • Low 4.1mΩ on-state resistance at 10V.
  • Rated for -55°C to +175°C operation.
  • Compact PowerDI3333-8 surface mount package.

DMTH6005LFG-13 Applications

  • Suitable for synchronous rectification circuits.
  • Used in DC-DC converter power stages.
  • Ideal for motor control applications.
  • Supports high-efficiency power management designs.
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