Mfr Part #:

DMTH10H003SPSW-13

100V N-Channel MOSFET from Diodes Incorporated with 166A continuous drain current and low 3mOhm on-resistance. Surface mount in PowerDI5060-8 package.

✓ Total Stock: 30,000 pcs

$ Price Range: $1.71 - $3.78

DMTH10H003SPSW-13 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	30,000 pcs On Request	30000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

DMTH10H003SPSW-13 Description

Short technical summary and product information.

The DMTH10H003SPSW-13 is a 100V N-Channel enhancement mode MOSFET designed to minimize on-state resistance while maintaining superior switching performance, making it ideal for high efficiency power management applications. Key electrical specifications include a maximum drain-source voltage of 100V, continuous drain current of 166A at Tc=25°C, and low on-resistance of 3mOhm max at Vgs=10V (5mOhm max at Vgs=6V). The device features low input capacitance (5542pF at Vds=50V) and gate charge (85nC at Vgs=10V) for efficient switching. It is rated for operation from -55°C to 175°C junction temperature.

The MOSFET is housed in a PowerDI5060-8 surface mount package (8-PowerTDFN) with wettable flank for improved optical inspection. It is supplied in tape and reel packaging with 2500 pieces per reel. The device is RoHS3 compliant, halogen and antimony free, and has a moisture sensitivity level of 1 (unlimited). Applications include engine management systems, body control electronics, and DC-DC converters. The part is 100% tested for unclamped inductive switching (UIS) to ensure reliability.

DMTH10H003SPSW-13 Quick Information

Product Type: N-Channel MOSFET

Canonical Name: DMTH10H003SPSW-13 N-Channel MOSFET

Subcategory: N-Channel MOSFET

DMTH10H003SPSW-13 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): Level 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: Yes

DMTH10H003SPSW-13 Estimated Pricing

Qty	Low	High
1+	$3.78	$3.78
10+	$2.46	$2.46
100+	$1.71	$1.71
2,500+	$1.71	$1.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMTH10H003SPSW-13 Features

100V drain-source breakdown voltage.
166A continuous drain current rating.
Low 3mOhm on-resistance at 10V.
Surface mount PowerDI5060-8 package.
RoHS3 compliant and halogen free.

DMTH10H003SPSW-13 Applications

Engine management systems.
Body control electronics.
DC-DC converters.
High efficiency power management.

DMTH10H003SPSW-13 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

100V maximum.

What is the continuous drain current?

166A at Tc=25°C.

What is the on-resistance?

3mOhm max at Vgs=10V, Id=30A; 5mOhm max at Vgs=6V.

What is the operating temperature range?

-55°C to 175°C junction temperature.

What package is it available in?

PowerDI5060-8 (8-PowerTDFN).

Is it RoHS compliant?

Yes, RoHS3 compliant.

What is the gate threshold voltage?

4V max at Id=250µA.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Diodes Incorporated
AEC Qualified	Yes
Automotive Grade	Yes
Current	166 A (Tc)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	85 nC @ 10 V
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	5542 pF @ 50 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	2.6 W (Ta)
Rds On (Max) @ Id, Vgs	3 mOhm
Storage Temperature	-55°C ~ 175°C
Supplier Device Package	PowerDI5060-8 (Type Q)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4 V @ 250 µA
Weight	0.097 g