| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The DMT6018LDR-7 is a dual N-Channel MOSFET from Diodes Incorporated. This device is designed for a variety of power management and switching applications, offering a drain-to-source voltage rating of 60V and a continuous drain current of 8.8A. With a maximum on-resistance of 17mΩ at a 10V gate drive, it provides efficient switching and low conduction losses.
The MOSFET features a gate charge of 13.9nC and input capacitance of 869pF, making it suitable for high-frequency switching circuits. It operates over a junction temperature range of -55°C to 150°C and can dissipate up to 1.9W of power. The device comes in a surface-mount 8-PowerVDFN package with a V-DFN3030-8 supplier device package, which offers a compact footprint for space-constrained PCB designs.
This dual MOSFET configuration integrates two N-channel devices in one package, simplifying board layout and reducing component count. It is suitable for synchronous rectification, load switching, DC-DC converters, and other power management circuits. The surface-mount design supports automated assembly processes, making it a practical choice for high-volume manufacturing.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.97 | $1.97 |
| 10+ | $1.10 | $1.10 |
| 100+ | $0.81 | $0.81 |
| 500+ | $0.79 | $0.79 |
| 3,000+ | $0.47 | $0.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V
8.8A
17 mΩ at 8.2A, 10V
-55°C to 150°C (junction)
8-PowerVDFN (V-DFN3030-8)
RoHS3 Compliant (unverified)
13.9 nC at 10V