DMT6008LFG-7 DMT6008LFG-7 is a 60V N-channel enhancement mode MOSFET from Diodes Incorporated. It offers a low on-resistance of 7.5 mOhm and is capable of 13A continuous drain current.
Mfr Part #:

DMT6008LFG-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMT6008LFG-7 is a 60V N-channel enhancement mode MOSFET from Diodes Incorporated. It offers a low on-resistance of 7.5 mOhm and is capable of 13A continuous drain current.
✓ Total Stock: 27,020 pcs
$ Price Range: $0.37 - $1.39

DMT6008LFG-7 Available from 1 distributor

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✓ Non-Authorised
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DMT6008LFG-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMT6008LFG-7 Description

Short technical summary and product information.

The DMT6008LFG-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated. It features a maximum drain-source voltage of 60V and a continuous drain current of 13A at ambient temperature and 60A at case temperature. The device is built using advanced MOSFET technology to minimize on-state resistance and maintain superior switching performance.

 

Key electrical characteristics include a maximum Rds(on) of 7.5 mOhm at Vgs=10V and Id=20A, and 11.5 mOhm at Vgs=4.5V. The gate charge is 50.4 nC at 10V, and input capacitance is 2713 pF at Vds=30V. The gate threshold voltage is 2V maximum at Id=250µA. The device operates over a junction temperature range of -55°C to 150°C.

 

The MOSFET is housed in a surface-mount PowerDI3333-8 package, which offers a small footprint and excellent thermal performance. It is rated for a maximum power dissipation of 2.2W at ambient and 41W at case temperature. The package is RoHS3 compliant, lead-free, and halogen-free.

 

Typical applications include synchronous rectification, backlighting, power management functions, and DC-DC converters. The device is also 100% UIS (avalanche) rated and qualified to AEC-Q101 standards for high reliability.

DMT6008LFG-7 Quick Information

Product Type: N-Channel MOSFET
Series: DMT6008LFG
Canonical Name: Diodes Incorporated DMT6008LFG-7 N-Channel MOSFET
Subcategory: Single

DMT6008LFG-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMT6008LFG-7 Estimated Pricing

Qty Low High
1+ $1.39 $1.39
10+ $0.87 $0.87
100+ $0.58 $0.58
500+ $0.45 $0.45
1,000+ $0.41 $0.41
2,000+ $0.37 $0.37

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMT6008LFG-7 Features

  • Low on-resistance of 7.5 mOhm at 10V.
  • Rated for 60V drain-source voltage.
  • Capable of 60A continuous drain current at Tc.
  • Surface mount PowerDI3333-8 package.
  • RoHS compliant and lead-free.

DMT6008LFG-7 Applications

  • Synchronous rectification in power supplies.
  • DC-DC converter applications.
  • Power management functions.
  • Backlighting circuits.

DMT6008LFG-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage rating?

The maximum drain-source voltage is 60V.

What is the maximum continuous drain current?

The continuous drain current is 13A at Ta=25°C and 60A at Tc=25°C (Vgs=10V).

What package type is the DMT6008LFG-7 available in?

It comes in a PowerDI3333-8 surface-mount package.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is the DMT6008LFG-7 RoHS compliant?

Yes, it is RoHS3 compliant as per the datasheet.

What is the typical on-resistance at 10V gate drive?

The maximum Rds(on) is 7.5 mOhm at Vgs=10V and Id=20A.

What is the gate charge of this MOSFET?

The maximum gate charge is 50.4 nC at Vgs=10V.

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