DMT6007LFGQ-13 N-Channel enhancement mode MOSFET rated for 60V drain-source voltage and 15A continuous drain current at 25°C ambient. Features low on-resistance of 6mOhm at 10V gate drive and is AEC-Q101 qualified for automotive applications.
Mfr Part #:

DMT6007LFGQ-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET rated for 60V drain-source voltage and 15A continuous drain current at 25°C ambient. Features low on-resistance of 6mOhm at 10V gate drive and is AEC-Q101 qualified for automotive applications.
✓ Total Stock: 100,020 pcs
$ Price Range: $0.55 - $2.03

DMT6007LFGQ-13 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
100,020 pcs
100020 pcs On Request 1 On Request On Request On Request On Request On Request

DMT6007LFGQ-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMT6007LFGQ-13 Description

Short technical summary and product information.

This MOSFET is designed to meet stringent automotive requirements. It is AEC-Q101 qualified and PPAP capable. Key specifications include 60V drain-source breakdown voltage, 80A continuous drain current at case temperature 25°C, and low on-resistance of 6mOhm at VGS=10V. The device also offers 8.5mOhm at 4.5V gate drive for low-voltage logic level operation. Total gate charge is 41.3nC at 10V. The PowerDI3333-8 package provides a small footprint with excellent thermal performance, with power dissipation up to 62.5W at case temperature 25°C. The MOSFET is RoHS3 compliant, halogen and antimony free, and has MSL Level 1 moisture sensitivity. Applications include brushless DC motor controls, DC-DC converters, and load switches.

DMT6007LFGQ-13 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel Enhancement Mode MOSFET, 60V, 15A (Ta), PowerDI3333-8
Subcategory: Single N-Channel MOSFET

DMT6007LFGQ-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

DMT6007LFGQ-13 Estimated Pricing

Qty Low High
1+ $2.03 $2.03
10+ $1.14 $1.14
100+ $0.86 $0.86
3,000+ $0.55 $0.55

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMT6007LFGQ-13 Features

  • Low on-resistance of 6mOhm at 10V gate drive.
  • AEC-Q101 qualified for automotive applications.
  • High continuous drain current up to 80A at case.
  • Small PowerDI3333-8 surface mount package.
  • RoHS3 compliant and halogen free.

DMT6007LFGQ-13 Applications

  • Ideal for brushless DC motor controls.
  • Used in DC-DC converter circuits.
  • Suitable for load switch applications.

DMT6007LFGQ-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

60V.

What package does the DMT6007LFGQ-13 come in?

PowerDI3333-8 surface mount package.

What is the operating junction temperature range?

-55°C to 150°C.

Is the DMT6007LFGQ-13 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the on-resistance at 10V gate drive?

6mOhm maximum at ID=20A, VGS=10V.

What is the total gate charge?

41.3nC maximum at VGS=10V.

Is this MOSFET qualified for automotive use?

Yes, it is AEC-Q101 qualified and PPAP capable.

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