DMT34M1LPS-13 N-Channel enhancement mode MOSFET from Diodes Incorporated. 30V drain-source voltage, 100A continuous drain current, and low 3.2mOhm on-resistance.
Mfr Part #:

DMT34M1LPS-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET from Diodes Incorporated. 30V drain-source voltage, 100A continuous drain current, and low 3.2mOhm on-resistance.
✓ Total Stock: 8,520 pcs
$ Price Range: $0.33 - $1.31

DMT34M1LPS-13 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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8,520 pcs
8520 pcs On Request 1 On Request On Request On Request On Request On Request

DMT34M1LPS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMT34M1LPS-13 Description

Short technical summary and product information.

The DMT34M1LPS-13 is an N-channel enhancement mode MOSFET designed for low on-state resistance (RDS(ON)) and superior switching performance. It is ideal for high-efficiency power management applications such as backlighting, DC-DC converters, and general power management functions.

 

Key electrical characteristics include a drain-source breakdown voltage of 30V, continuous drain current of 100A at Tc=25°C, and maximum on-resistance of 3.2mOhm at Vgs=10V, Id=20A. Gate charge is 39nC at 10V, and input capacitance is 2242pF at Vds=15V. The device is also rated for pulsed drain current up to 250A.

 

The MOSFET is housed in a PowerDI5060-8 surface mount package (8-PowerTDFN) with a weight of 0.097g. It operates over a junction temperature range of -55°C to 150°C with a maximum power dissipation of 42W. The package is UL 94V-0 rated and meets MSL Level 1 per J-STD-020.

DMT34M1LPS-13 Quick Information

Product Type: N-Channel MOSFET
Series: DMT34M1LPS
Canonical Name: DMT34M1LPS-13 N-Channel MOSFET
Subcategory: Single MOSFETs

DMT34M1LPS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

DMT34M1LPS-13 Estimated Pricing

Qty Low High
1+ $1.31 $1.31
10+ $0.69 $0.69
100+ $0.54 $0.54
500+ $0.53 $0.53
2,500+ $0.33 $0.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMT34M1LPS-13 Features

  • Low on-resistance of 3.2mOhm at 10V.
  • High continuous drain current rating of 100A.
  • Excellent gate charge figure of merit.
  • Surface mount PowerDI5060-8 package.
  • RoHS compliant and halogen-free.

DMT34M1LPS-13 Applications

  • Ideal for backlighting power management.
  • Suitable for DC-DC converter designs.
  • Used in high efficiency power supplies.
  • Supports power management functions.

DMT34M1LPS-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the DMT34M1LPS-13?

30V.

What package does the DMT34M1LPS-13 come in?

8-PowerTDFN surface mount package, also known as PowerDI5060-8.

What is the operating temperature range of the DMT34M1LPS-13?

-55°C to 150°C junction temperature.

Is the DMT34M1LPS-13 RoHS compliant?

Yes, RoHS compliant with lead-free finish and halogen-free green device.

What is the maximum continuous drain current rating?

100A at Tc=25°C, 80A at Tc=70°C, 21A at TA=25°C.

What is the typical on-resistance at 10V gate drive?

3.2mOhm maximum at Vgs=10V, Id=20A.

What is the gate charge of the DMT34M1LPS-13?

39nC maximum at Vgs=10V.

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