| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Avalanche Current | |
| Avalanche Energy | |
| Body Diode Forward Current | |
| Case / Package | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-Source Voltage (Max) | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Packaging Type | |
| Power | |
| Pulsed Drain Current (Q2) | |
| Pulsed Drain Current - Q1 | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Solderability | |
| Standard Package Qty | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Finish | |
| Vgs(th) (Max) @ Id | |
| Weight | |
| drain_current_continuous_q1 (Maximum @ TA=+25 °C, VGS=10 V) | |
| drain_current_continuous_q1 (Maximum @ TC=+25 °C, VGS=10 V) | |
| drain_current_continuous_q2 (Maximum @ TA=+25 °C, VGS=10 V) | |
| drain_current_continuous_q2 (Maximum @ TC=+25 °C, VGS=10 V) | |
| rds_on_max_q1 (Maximum @ VGS=10 V) | |
| rds_on_max_q1 (Maximum @ VGS=4.5 V) | |
| rds_on_max_q2 (Maximum @ VGS=10 V) | |
| rds_on_max_q2 (Maximum @ VGS=4.5 V) |
The DMT3011LDT-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It features two asymmetrical N-channel MOSFETs in a single V-DFN3030-8 surface mount package, with a low profile of 0.6mm and a PCB footprint of 4mm².
Key electrical specifications include a drain-source voltage of 30V, continuous drain currents of 8A (Q1) and 10.7A (Q2) at ambient temperature (25°C), and higher ratings at case temperature (21.5A and 28.9A). The on-resistance (Rds(on)) is low: 20mΩ for Q1 and 11.1mΩ for Q2 at VGS=10V, with slightly higher values at 4.5V. The gate charge is 13.2nC, and input capacitance is 641pF, enabling efficient switching performance.
The device is rated for operation from -55°C to 155°C (junction temperature) and has a maximum power dissipation of 1.9W. It is avalanche rated with a maximum avalanche current of 14A and energy of 9.8mJ. The package is V-DFN3030-8 (Type K) with NiPdAu over copper leadframe termination, and it is solderable per MIL-STD-202, Method 208. The part is supplied in tape and reel packaging with 3000 units per reel.
Environmental compliance is high: RoHS3 compliant, totally lead-free, halogen and antimony free, and moisture sensitivity level 1 (unlimited). Typical applications include mobile computing, point-of-load regulators, and general high-efficiency power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.41 | $1.41 |
| 10+ | $0.89 | $0.89 |
| 100+ | $0.59 | $0.59 |
| 500+ | $0.46 | $0.46 |
| 1,000+ | $0.42 | $0.42 |
| 3,000+ | $0.34 | $0.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
V-DFN3030-8 (Type K) surface mount package.
-55°C to 155°C (TJ).
Yes, it is RoHS3 compliant and lead-free.
Q1: 8A at TA=25°C, 21.5A at TC=25°C; Q2: 10.7A at TA=25°C, 28.9A at TC=25°C.
Q1: 20mΩ at VGS=10V, 32mΩ at VGS=4.5V; Q2: 11.1mΩ at VGS=10V, 13.8mΩ at VGS=4.5V.
13.2 nC at VGS=10V.