DMT10H015LPS-13 N-Channel enhancement mode MOSFET with 100V drain-source voltage and 7.3A continuous drain current at 25°C ambient. Designed for high efficiency and low on-state losses in a PowerDI5060-8 package.
Mfr Part #:

DMT10H015LPS-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 100V drain-source voltage and 7.3A continuous drain current at 25°C ambient. Designed for high efficiency and low on-state losses in a PowerDI5060-8 package.
✓ Total Stock: 41,020 pcs
$ Price Range: $0.52 - $1.88

DMT10H015LPS-13 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
41,020 pcs
41020 pcs On Request 1 On Request On Request On Request On Request On Request

DMT10H015LPS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

DMT10H015LPS-13 Description

Short technical summary and product information.

The DMT10H015LPS-13 is a 100V N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a maximum drain-source voltage of 100V and a continuous drain current of 7.3A at ambient temperature (44A at case temperature). The device offers low on-resistance of 16mΩ maximum at Vgs=10V and Id=20A, and 18mΩ maximum at Vgs=6V and Id=41A, minimizing conduction losses.

 

With a gate charge of 33.3nC and input capacitance of 1871pF, this MOSFET is suitable for high-efficiency switching applications such as DC-DC converters and motor control. The gate threshold voltage is 3.5V maximum at 250µA, and the device can be driven by logic-level voltages down to 4.5V.

 

The MOSFET is packaged in a PowerDI5060-8 surface mount package with a low profile (<1.1mm), making it ideal for thin applications. It is rated for operation from -55°C to 150°C junction temperature. The terminal finish is matte tin annealed over copper lead-frame, and the device is RoHS3 compliant and halogen- and antimony-free.

DMT10H015LPS-13 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMT10H015LPS-13 - N-Channel Enhancement Mode MOSFET, 100V, 7.3A
Subcategory: Single

DMT10H015LPS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

DMT10H015LPS-13 Estimated Pricing

Qty Low High
1+ $1.88 $1.88
10+ $1.20 $1.20
100+ $0.80 $0.80
500+ $0.67 $0.67
1,000+ $0.59 $0.59
2,500+ $0.52 $0.52

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMT10H015LPS-13 Features

  • 100V drain-source voltage rating.
  • Low 16mΩ on-resistance at 10V.
  • Supply current up to 44A at case temperature.
  • Surface mount PowerDI5060-8 package.
  • RoHS3 compliant and halogen-free.

DMT10H015LPS-13 Applications

  • Motor control applications.
  • DC-DC converter power stages.
  • Notebook battery power management.
  • Load switches.

DMT10H015LPS-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

100V.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the DMT10H015LPS-13 RoHS compliant?

Yes, RoHS3 compliant.

What package is the device available in?

PowerDI5060-8 surface mount package.

What is the maximum drain current?

7.3A at 25°C ambient temperature, 44A at 25°C case temperature.

What is the on-resistance?

16mΩ maximum at Vgs=10V, Id=20A; 18mΩ maximum at Vgs=6V, Id=41A.

What is the gate charge?

33.3nC maximum at Vgs=10V.

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