| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,020 pcs
|
11020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMT10H010LSS-13 is a 100V N-Channel enhancement mode MOSFET from Diodes Incorporated, designed to minimize on-resistance while maintaining superior switching performance. It is ideal for power management, load switching, backlighting, and DC-DC converter applications.
This device offers a maximum drain-source voltage of 100V, a continuous drain current of 29.5A at TC=+25°C (11.5A at TA=+25°C), and a 9.5mΩ maximum drain-source on-resistance at VGS=10V. The gate threshold voltage is 2.8V max, and input capacitance is 3000pF at VDS=50V. With a gate charge of 71nC, the MOSFET supports fast switching and high conversion efficiency.
Manufactured in an SO-8 surface-mount package, this device is qualified to AEC-Q101 standards for high reliability. It is totally lead-free and fully RoHS compliant, and halogen- and antimony-free. The moisture sensitivity level is 1 per J-STD-020, with a UL 94V-0 flammability rating. Each unit is 100% tested for unclamped inductive switching (UIS) in production.
Typical applications include notebook battery power management, load switches, backlighting, and DC-DC converters. The low on-resistance minimizes conduction losses, making it suited for high-efficiency power conversion circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.43 | $2.43 |
| 10+ | $1.25 | $1.25 |
| 100+ | $1.02 | $1.02 |
| 500+ | $0.90 | $0.90 |
| 1,000+ | $0.81 | $0.81 |
| 2,500+ | $0.73 | $0.73 |
| 5,000+ | $0.67 | $0.67 |
| 10,000+ | $0.65 | $0.65 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The device is available in an SO-8 surface-mount package (8-SOIC, 0.154" width, 3.90mm).
The junction operating temperature range is -55°C to +150°C.
Yes, it is RoHS3 compliant and lead-free, and halogen- and antimony-free.
The continuous drain current is 29.5A at TC=+25°C, 18.6A at TC=+100°C, and 11.5A at TA=+25°C.
The maximum RDS(on) is 9.5mΩ at VGS=10V and ID=13A.
The total gate charge is 71nC maximum at VGS=10V.