DMS3016SSSA-13 DMS3016SSSA-13 is a 30V N-Channel enhancement mode MOSFET with integrated Schottky diode, designed for power management. It features 13mOhm on-resistance at 10V and 9.8A continuous drain current.
Mfr Part #:

DMS3016SSSA-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMS3016SSSA-13 is a 30V N-Channel enhancement mode MOSFET with integrated Schottky diode, designed for power management. It features 13mOhm on-resistance at 10V and 9.8A continuous drain current.
✓ Total Stock: 5,000 pcs

DMS3016SSSA-13 Available from 1 distributor

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5000 pcs On Request 1 On Request On Request 24+ On Request On Request

DMS3016SSSA-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMS3016SSSA-13 Description

Short technical summary and product information.

The DMS3016SSSA-13 from Diodes Incorporated is an N-channel enhancement mode MOSFET that integrates a Schottky diode on a single die using Diodes' patented DIOFET process. This device is designed to minimize on-state resistance (RDS(on)) while maintaining superior switching performance, making it suitable for high-efficiency power management applications.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 30V, a continuous drain current of 9.8A at 25°C ambient, and a maximum on-resistance of 13mOhm at Vgs=10V and 16mOhm at Vgs=4.5V. The gate threshold voltage is 2.3V maximum at 250µA drain current. The device exhibits low input capacitance (1849pF at Vds=15V) and low total gate charge (43nC at Vgs=10V), which contribute to reduced switching losses.

 

The MOSFET is housed in a standard 8-SOIC surface-mount package (0.154", 3.90mm width) with a maximum power dissipation of 1.54W at 25°C ambient. It operates over a junction temperature range of -55°C to 150°C. The package is supplied on tape and reel with 2500 units per reel.

 

The DMS3016SSSA-13 is fully RoHS compliant, lead-free, halogen-free, and antimony-free, and is qualified to AEC-Q101 standards for automotive applications. It is suitable for backlighting, DC-DC converters, and general power management functions.

DMS3016SSSA-13 Quick Information

Product Type: MOSFET
Canonical Name: DMS3016SSSA-13 N-Channel Enhancement Mode MOSFET with Schottky Diode
Subcategory: Single N-Channel MOSFET

DMS3016SSSA-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMS3016SSSA-13 Features

  • Integrated Schottky diode for reduced body diode losses.
  • Low on-resistance of 13mOhm at 10V gate drive.
  • Rated for 30V drain-source voltage and 9.8A current.
  • AEC-Q101 qualified for automotive reliability.
  • RoHS compliant and halogen-free green device.

DMS3016SSSA-13 Applications

  • Ideal for backlighting power management circuits.
  • Used in DC-DC converter applications.
  • Suitable for general power management functions.
  • Designed for high-efficiency switching power supplies.

DMS3016SSSA-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

30V.

What is the package type?

8-SOIC (0.154", 3.90mm Width).

What is the operating temperature range?

-55°C to 150°C (junction).

Is this device RoHS compliant?

Yes, RoHS3 compliant and lead-free.

What is the maximum continuous drain current?

9.8A at 25°C ambient temperature.

What is the maximum on-resistance?

13mOhm at Vgs=10V, 9.8A; 16mOhm at Vgs=4.5V, 8.0A.

What is the gate threshold voltage?

2.3V maximum at 250µA drain current.

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