| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,500 pcs
|
12500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMS3016SSS-13 is an N-channel enhancement mode MOSFET from Diodes Incorporated, featuring a monolithically integrated Schottky diode using the patented DIOFET process. This device is designed to deliver low conduction losses with a maximum drain-source on-resistance of 13mΩ at 10V gate drive, and a low forward voltage drop for reduced body diode conduction losses. It is rated for a maximum drain-source voltage of 30V and continuous drain current of 9.8A at 25°C ambient.
The MOSFET offers low gate charge (43nC at 10V) and a low Qg/Qgs ratio to minimize shoot-through risks at high frequencies. It is avalanche rugged, rated for 13A avalanche current and 25.4mJ repetitive avalanche energy. The device operates over a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 1.54W at 25°C ambient.
Packaged in an 8-SOIC (SO-8) surface-mount package with a green molding compound, the DMS3016SSS-13 is supplied in tape and reel packaging with 2500 units per reel. It is fully RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards for high reliability automotive applications.
The maximum drain-source voltage is 30V.
The maximum continuous drain current is 9.8A at TA = +25°C.
The maximum drain-source on-resistance is 13mΩ at ID = 9.8A and VGS = 10V.
The operating junction temperature range is -55°C to +150°C.
Yes, it is fully RoHS compliant (RoHS3) per the datasheet.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, also known as SO-8.
The maximum gate charge is 43nC at VGS = 10V.