| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,520 pcs
|
3520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The DMPH4011SK3-13 is a P-Channel enhancement mode MOSFET designed for high efficiency power management applications. It is rated for a drain-source voltage (Vdss) of 40V and can handle a continuous drain current of -79A at a case temperature of 25°C. The device offers a maximum on-resistance of 11 mOhm at Vgs = -10V, enabling low conduction losses.
The MOSFET is housed in a TO252 (DPAK) surface-mount package and is rated for operation up to 175°C junction temperature, making it suitable for high ambient temperature environments. It is 100% tested for unclamped inductive switching (UIS) and features fast switching performance.
Typical applications include DC-DC converters, power management functions, and backlighting. The part is RoHS compliant and halogen and antimony free, designated as a green device.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.94 | $1.94 |
| 10+ | $1.36 | $1.36 |
| 100+ | $1.04 | $1.04 |
| 500+ | $0.90 | $0.90 |
| 1,000+ | $0.85 | $0.85 |
| 2,500+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 40V.
Continuous drain current is -79A at Tc=25°C and -56A at Tc=100°C (Vgs=-10V).
Maximum on-resistance is 11 mOhm at Id=9.8A and Vgs=10V.
It is a P-Channel enhancement mode MOSFET.