| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
123,800 pcs
|
123800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
79,598 pcs
|
79598 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
62,916 pcs
|
62916 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
13,020 pcs
|
13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
13 pcs
|
13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMP6110SVT-7 is a P-Channel enhancement mode MOSFET from Diodes Incorporated, designed for high efficiency power management applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 7.3A at 25°C case temperature. The device offers low on-resistance of 105mΩ at 10V gate drive and 130mΩ at 4.5V, enabling reduced conduction losses.
With a gate threshold voltage of 3V maximum at 250µA drain current, the MOSFET is suitable for logic-level drive. It has a gate charge of 17.2nC at 10V and input capacitance of 969pF at 30V Vds, ensuring fast switching performance.
The device is housed in a compact TSOT26 surface mount package, measuring only 0.008 grams, making it ideal for space-constrained designs. It is rated for operating junction temperatures from -55°C to 150°C and has a maximum power dissipation of 1.2W at 25°C ambient. The MOSFET is qualified to AEC-Q101 standards for high reliability and is fully RoHS and halogen-free compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.03 | $1.03 |
| 10+ | $0.56 | $0.56 |
| 100+ | $0.50 | $0.50 |
| 500+ | $0.36 | $0.36 |
| 3,000+ | $0.36 | $0.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 60V.
It is available in the TSOT26 surface mount package (SOT-23-6 Thin, TSOT-23-6).
The junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and lead-free.
The maximum on-resistance is 105mΩ at Vgs=10V and 130mΩ at Vgs=4.5V.
The maximum continuous drain current (Id) is 7.3A at 25°C case temperature.
The maximum gate threshold voltage is 3V at 250µA drain current.