DMP58D0SV-7 Dual P-Channel MOSFET (Metal Oxide) with logic level gate, rated for 50V drain-source voltage and 160mA continuous drain current. Features 8 Ohm on-resistance at 100mA, 5V gate drive.
Mfr Part #:

DMP58D0SV-7

Available from 3 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual P-Channel MOSFET (Metal Oxide) with logic level gate, rated for 50V drain-source voltage and 160mA continuous drain current. Features 8 Ohm on-resistance at 100mA, 5V gate drive.
✓ Total Stock: 342,040 pcs
$ Price Range: $0.11 - $0.14

DMP58D0SV-7 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
336,000 pcs
336000 pcs On Request 1 On Request On Request 18+ On Request On Request
Non-Authorised Inventory information
5,040 pcs
5040 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

DMP58D0SV-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

DMP58D0SV-7 Description

Short technical summary and product information.

The DMP58D0SV-7 is a dual P-Channel enhancement-mode MOSFET from Diodes Incorporated, utilizing Metal Oxide technology with a logic level gate. It is designed for low-power switching applications where space is critical.

 

Key electrical specifications include a maximum drain-source voltage of 50V and a continuous drain current of 160mA. The on-resistance is 8 Ohm at 100mA drain current and 5V gate drive. The gate threshold voltage is 2.1V at 250µA, enabling direct drive from 3.3V or 5V logic. Input capacitance is 27pF at 25V, contributing to low switching losses.

 

The device is housed in a compact SOT-563 surface mount package (also compatible with SOT-666). Maximum power dissipation is 400mW, and the operating junction temperature range is -55°C to 150°C. The dual configuration saves board space in applications requiring two P-Channel switches, such as load switching, power management in portable devices, and signal routing.

DMP58D0SV-7 Quick Information

Product Type: Dual P-Channel MOSFET
Canonical Name: DMP58D0SV-7 Dual P-Channel MOSFET
Subcategory: Dual P-Channel MOSFET

DMP58D0SV-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DMP58D0SV-7 Estimated Pricing

Qty Low High
3,000+ $0.14 $0.14
6,000+ $0.13 $0.13
9,000+ $0.12 $0.12
15,000+ $0.11 $0.11
21,000+ $0.11 $0.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMP58D0SV-7 Features

  • Dual P-Channel MOSFET in SOT-563 package.
  • Rated for 50V drain-source voltage.
  • Continuous drain current up to 160mA.
  • Logic level gate for low voltage drive.
  • Low on-resistance of 8 Ohm typical.

DMP58D0SV-7 Applications

  • Load switching in portable electronics.
  • Power management in battery-powered devices.
  • Signal switching in low voltage circuits.
  • Ideal for dual P-Channel switch arrays.

DMP58D0SV-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMP58D0SV-7?

50V.

What package is the DMP58D0SV-7 available in?

SOT-563 (also SOT-666).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the DMP58D0SV-7 RoHS compliant?

RoHS3 Compliant (unverified).

What is the on-resistance of the DMP58D0SV-7?

8 Ohm at 100mA, 5V gate drive.

What is the gate threshold voltage?

2.1V at 250µA.

What is the input capacitance?

27pF at 25V.

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