DMP56D0UFB-7 P-Channel enhancement mode MOSFET with 50V drain-source voltage and 200mA continuous drain current. Features low on-resistance of 6 Ohm at 4V gate drive.
Mfr Part #:

DMP56D0UFB-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
P-Channel enhancement mode MOSFET with 50V drain-source voltage and 200mA continuous drain current. Features low on-resistance of 6 Ohm at 4V gate drive.
✓ Total Stock: 9,000 pcs
$ Price Range: $0.19 - $0.62

DMP56D0UFB-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,000 pcs
9000 pcs On Request 1 On Request On Request On Request On Request On Request

DMP56D0UFB-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMP56D0UFB-7 Description

Short technical summary and product information.

The DMP56D0UFB-7 is a P-Channel enhancement mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance while maintaining superior switching performance. It is ideal for high-efficiency power management applications such as DC-DC converters, power management functions, battery operated systems, and solid-state relays.

 

Key electrical specifications include a drain-source voltage rating of 50V, continuous drain current of 200mA, and pulsed drain current of 700mA. The on-resistance is typically 6 Ohm at Vgs = -4V and 100mA, and 8 Ohm at Vgs = -2.5V and 160mA. The gate threshold voltage is 1.2V at 250µA. The device features low gate charge (0.58 nC) and low input capacitance (50.54 pF), enabling fast switching.

 

The MOSFET is housed in a compact X1-DFN1006-3 surface mount package (3-UFDFN) with a weight of only 0.001 grams. It is supplied in tape and reel packaging with a standard quantity of 3000 pieces. The device is RoHS3 compliant, halogen and antimony free ("Green"), and has a moisture sensitivity level of 1 (unlimited). Operating temperature range is -55°C to 150°C junction.

DMP56D0UFB-7 Quick Information

Product Type: MOSFET
Canonical Name: DMP56D0UFB-7 P-Channel MOSFET
Subcategory: Single MOSFET

DMP56D0UFB-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

DMP56D0UFB-7 Estimated Pricing

Qty Low High
1+ $0.62 $0.62
10+ $0.28 $0.28
100+ $0.25 $0.25
500+ $0.19 $0.19
3,000+ $0.19 $0.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMP56D0UFB-7 Features

  • P-Channel enhancement mode MOSFET.
  • 50V drain-source voltage rating.
  • 200mA continuous drain current.
  • Low on-resistance of 6 Ohm at 4V.
  • Surface mount X1-DFN1006-3 package.

DMP56D0UFB-7 Applications

  • Used in DC-DC converter circuits.
  • Ideal for power management functions.
  • Suitable for battery operated systems.
  • Used in solid-state relays.

DMP56D0UFB-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

50V.

What is the package type?

X1-DFN1006-3 (3-UFDFN).

What is the operating temperature range?

-55°C to 150°C (junction).

Is this component RoHS compliant?

Yes, RoHS3 compliant.

What is the continuous drain current?

200mA.

What is the on-resistance?

6 Ohm at 100mA, 4V gate drive.

What is the gate threshold voltage?

1.2V at 250µA.

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