| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,144 pcs
|
1144 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMP4015SK3Q-13 is a P-Channel enhancement mode MOSFET designed for automotive and power management applications. It is qualified to AEC-Q101 and supports PPAP requirements. Key electrical specifications include a maximum drain-source voltage of 40V, continuous drain current of 35A at TC=+25°C (14A at TA=+25°C), and pulsed drain current up to 100A. The device offers low on-resistance: 11mΩ maximum at VGS=-10V and 15mΩ at VGS=-4.5V. Gate threshold voltage is 2.5V at ID=250µA. Gate charge is 47.5nC at VGS=5V, and input capacitance is 4234pF at VDS=20V. Power dissipation is 3.5W at TA=+25°C. The operating junction temperature range is -55°C to 150°C. The MOSFET is housed in a surface-mount TO-252-3 (DPAK) package, with a moisture sensitivity level of 1. It is RoHS3 compliant, halogen and antimony free, and has a UL 94V-0 flammability rating. Typical applications include DC-DC converters, power management functions, and backlighting.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
| 10+ | $0.95 | $0.95 |
| 100+ | $0.78 | $0.78 |
| 2,500+ | $0.78 | $0.78 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V
TO-252-3 (DPAK)
-55°C to 150°C
Yes, RoHS3 compliant
35A
2.5V at ID=250µA
11mΩ