DMP34M4SPS-13 P-Channel enhancement mode MOSFET from Diodes Incorporated. Features 30V drain-source voltage, 87A continuous drain current, low Rds(on) of 3.8mOhm, and PowerDI5060-8 surface mount package.
Mfr Part #:

DMP34M4SPS-13

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
P-Channel enhancement mode MOSFET from Diodes Incorporated. Features 30V drain-source voltage, 87A continuous drain current, low Rds(on) of 3.8mOhm, and PowerDI5060-8 surface mount package.
✓ Total Stock: 31,020 pcs
$ Price Range: $0.82 - $1.84

DMP34M4SPS-13 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
28,520 pcs
28520 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 21+ On Request On Request

DMP34M4SPS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMP34M4SPS-13 Description

Short technical summary and product information.

The DMP34M4SPS-13 is a P-Channel enhancement mode MOSFET designed for minimal on-state resistance while maintaining superior switching performance. Key electrical specifications include a maximum drain-source voltage of 30V, a continuous drain current of 87A at Tc=25°C with Vgs=-10V, and a low Rds(on) of 3.8mOhm maximum at Id=20A and Vgs=10V. For lower gate drive voltages, Rds(on) is 6.0mOhm maximum at Vgs=5V. The gate charge is 127nC and input capacitance is 3775pF, enabling efficient switching in power management applications. This device is ideal for notebook battery power management and load switch circuits. It is packaged in a PowerDI5060-8 surface mount package with a low profile of less than 1.1mm, weighing 0.097 grams. The package is molded with a green molding compound and has a moisture sensitivity level of 1 per J-STD-020. The terminal finish is matte tin annealed over copper leadframe, solderable per MIL-STD-202, Method 208. The device is supplied in tape and reel packaging with 2500 units per reel. It is RoHS3 compliant, halogen and antimony free, and lead-free.

DMP34M4SPS-13 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: DMP34M4SPS-13 - P-Channel Enhancement Mode MOSFET, 30V, 87A, PowerDI5060-8
Subcategory: Single MOSFET

DMP34M4SPS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

DMP34M4SPS-13 Estimated Pricing

Qty Low High
1+ $1.84 $1.84
10+ $1.17 $1.17
100+ $0.82 $0.82
2,500+ $0.82 $0.82

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMP34M4SPS-13 Features

  • Low on-resistance of 3.8mOhm at 10V.
  • 100% unclamped inductive switch tested.
  • Halogen-free and RoHS compliant.
  • 30V drain-source voltage rating.
  • 87A continuous drain current capability.

DMP34M4SPS-13 Applications

  • Notebook battery power management.
  • Load switch applications.
  • Power distribution in portable devices.
  • High-conversion-efficiency systems.

DMP34M4SPS-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

30V.

What is the package type?

PowerDI5060-8.

What is the operating temperature range?

-55°C to 150°C.

Is this device RoHS compliant?

Yes, RoHS3 compliant.

What is the continuous drain current at 25°C?

87A at Vgs=-10V, Tc=25°C.

What is the on-resistance at 10V?

3.8mOhm maximum at Id=20A, Vgs=10V.

What is the gate charge?

127nC at Vgs=10V.

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