| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33,000 pcs
|
33000 pcs | On Request | 1 | On Request | On Request | 1928+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMP32D5SFB-7B is a P-channel enhancement mode MOSFET from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance, making it suitable for high-efficiency power management applications.
The device has a drain-to-source breakdown voltage of 30 V and a maximum continuous drain current of 400 mA at 25°C ambient temperature (300 mA at 70°C). On-state resistance is 2.4 Ω maximum at VGS = -10 V and 4 Ω maximum at VGS = -4.5 V, both at 200 mA drain current. Gate threshold voltage is 2.3 V maximum at 250 µA drain current. The MOSFET is ESD protected and qualified to AEC-Q101 standards for high reliability.
The part is available in the ultra-small X1-DFN1006-3 surface mount package (3-UFDFN). The package features NiPdAu over copper leadframe terminals and green molding compound with UL 94V-0 flammability rating. Moisture sensitivity is Level 1 per J-STD-020, and the device is totally lead-free, RoHS compliant, and halogen and antimony free.
Typical applications include load switching, portable electronics, and power management functions. The low on-resistance makes it appropriate for battery-powered devices where minimizing conduction losses is important.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.52 | $0.52 |
| 10+ | $0.32 | $0.32 |
| 100+ | $0.20 | $0.20 |
| 500+ | $0.15 | $0.15 |
| 1,000+ | $0.12 | $0.12 |
| 5,000+ | $0.11 | $0.11 |
| 10,000+ | $0.09 | $0.09 |
| 20,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source breakdown voltage is 30 V.
The maximum continuous drain current is 400 mA at TA = +25°C (300 mA at 70°C), with a 1 A pulsed drain current rating.
Maximum on-resistance is 2.4 Ω at VGS = -10 V and 4 Ω at VGS = -4.5 V, both at 200 mA drain current.
The maximum gate threshold voltage is 2.3 V at a drain current of 250 µA.
It is available in the surface mount X1-DFN1006-3 package, also referred to as 3-UFDFN.
The operating junction temperature range is -55°C to +150°C.
Yes, it is fully RoHS compliant, totally lead-free, halogen and antimony free, and qualified to AEC-Q101 standards.