DistyParts Icon
DMP3056LSSQ-13 The Diodes Incorporated DMP3056LSSQ-13 is a P-Channel MOSFET designed for general-purpose applications. It features a 30V breakdown voltage and a 4.9A continuous drain current.
Mfr Part #:

DMP3056LSSQ-13

Available from 1 distributors
Mfr Name: DII
DII
The Diodes Incorporated DMP3056LSSQ-13 is a P-Channel MOSFET designed for general-purpose applications. It features a 30V breakdown voltage and a 4.9A continuous drain current.
✓ Total Stock: 2,500 pcs
$ Price Range: $1.88

DMP3056LSSQ-13 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Seba Components ✓
Non-Authorised Inventory information
2,500 pcs
On Request
2500 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMP3056LSSQ-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Gate Charge
Input Capacitance
Mounting Type
Operating Temperature
Power Dissipation
View Similar Products (0)

DMP3056LSSQ-13 Description

Short technical summary and product information.

The DMP3056LSSQ-13 from Diodes Incorporated is a P-Channel MOSFET suitable for various electronic applications. It offers a drain-source breakdown voltage (BVDSS) of 30V and a continuous drain current (ID) of 4.9A at 25°C ambient temperature.

 

This MOSFET has a typical gate threshold voltage (VGS(th)) of 2.1V and a typical on-resistance (Rds On) of 45mΩ at 10V gate-source voltage and 6A drain current. The typical gate charge (Qg) is 17.3nC at 10V, and the input capacitance (Ciss) is 969pF at 15V.

 

Packaged in an 8-SOIC surface-mount case, the DMP3056LSSQ-13 operates within a temperature range of -55°C to 150°C. It is AEC-Q101 qualified, indicating its suitability for automotive and high-reliability applications. The maximum power dissipation is 1.2W at 25°C ambient temperature.

DMP3056LSSQ-13 Quick Information

Product Type: MOSFET
Canonical Name: DMP3056LSSQ-13 P-Channel MOSFET
Subcategory: P-Channel

DMP3056LSSQ-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DMP3056LSSQ-13 Estimated Pricing

Qty Low High
1+ $1.88 $1.88

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMP3056LSSQ-13 Features

  • 30V drain-source breakdown voltage.
  • 4.9A continuous drain current.
  • 45mΩ typical on-resistance.
  • AEC-Q101 qualified.
  • 8-SOIC surface mount package.

DMP3056LSSQ-13 Applications

  • Used in power management circuits
  • Suitable for switching applications
  • Ideal for automotive electronics
  • Designed for high reliability environments

DMP3056LSSQ-13 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the DMP3056LSSQ-13?

The typical drain-source breakdown voltage is 30V.

What is the continuous drain current for the DMP3056LSSQ-13?

The continuous drain current is 4.9A at 25°C ambient temperature.

What is the typical on-resistance of the DMP3056LSSQ-13?

The typical on-resistance is 45mΩ at 6A and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

Is the DMP3056LSSQ-13 AEC-Q101 qualified?

Yes, the DMP3056LSSQ-13 is AEC-Q101 qualified.

What package type is the DMP3056LSSQ-13 supplied in?

It is supplied in an 8-SOIC surface mount package.

Home

Categories