DMP3036SSS-13 P-Channel enhancement mode MOSFET with -30V drain-source voltage, -19.5A continuous drain current, and 20mΩ on-resistance. Packaged in SO-8, surface mount, RoHS3 compliant.
Mfr Part #:

DMP3036SSS-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
P-Channel enhancement mode MOSFET with -30V drain-source voltage, -19.5A continuous drain current, and 20mΩ on-resistance. Packaged in SO-8, surface mount, RoHS3 compliant.
✓ Total Stock: 68,520 pcs
$ Price Range: $0.55 - $1.32

DMP3036SSS-13 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
68,520 pcs
68520 pcs On Request 1 On Request On Request On Request On Request On Request

DMP3036SSS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMP3036SSS-13 Description

Short technical summary and product information.

The DMP3036SSS-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It features a drain-source voltage rating of -30V, a continuous drain current of -19.5A at TC=25°C, and a low maximum on-resistance of 20mΩ at VGS=-10V. The device also offers a low input capacitance and fast switching speed, making it suitable for DC-DC converters, power management functions, and backlighting circuits.

 

The MOSFET is housed in an SO-8 surface mount package, which is suitable for automated assembly. It is fully RoHS3 compliant, lead-free, and halogen-free, meeting current environmental standards. The operating temperature range is -55°C to +150°C, and the device has a moisture sensitivity level of 1 per J-STD-020.

 

With a gate threshold voltage of 3V max and a gate charge of 16.5nC, the DMP3036SSS-13 offers predictable switching behavior. The package weight is approximately 0.076 grams. This component is ideal for space-constrained power management designs.

DMP3036SSS-13 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: P-Channel Enhancement Mode MOSFET
Subcategory: Single MOSFET

DMP3036SSS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMP3036SSS-13 Estimated Pricing

Qty Low High
1+ $1.32 $1.32
10+ $0.62 $0.62
100+ $0.55 $0.55
2,500+ $0.55 $0.55

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMP3036SSS-13 Features

  • Low on-resistance 20mΩ at -10V gate drive.
  • Supports -19.5A continuous drain current.
  • Low input capacitance for fast switching.
  • SO-8 surface mount package.

DMP3036SSS-13 Applications

  • Used in DC-DC converter circuits.
  • Ideal for power management functions.
  • Suitable for backlighting applications.

DMP3036SSS-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMP3036SSS-13?

The maximum drain-source voltage is -30V.

What package is the DMP3036SSS-13 available in?

It comes in an SO-8 surface mount package.

What is the operating temperature range of the DMP3036SSS-13?

The operating temperature range is -55°C to +150°C.

Is the DMP3036SSS-13 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the maximum continuous drain current of the DMP3036SSS-13?

The maximum continuous drain current is -19.5A at TC=25°C with VGS=-10V.

What is the on-resistance of the DMP3036SSS-13?

The maximum on-resistance is 20mΩ at VGS=-10V and ID=9A.

What is the gate threshold voltage of the DMP3036SSS-13?

The maximum gate threshold voltage is 3V at ID=250µA.

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